Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Ryan C. White"'
Autor:
Matthew S. Wong, Philip Chan, Norleakvisoth Lim, Haojun Zhang, Ryan C. White, James S. Speck, Steven P. Denbaars, Shuji Nakamura
Publikováno v:
Crystals, Vol 12, Iss 5, p 721 (2022)
In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm2 for device dimensions from 5 × 5 to 100
Externí odkaz:
https://doaj.org/article/469a83544a97432fb182f528dd02d45c
Autor:
Ryan C. White, Hongjian Li, Michel Khoury, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars
Publikováno v:
Crystals, Vol 11, Iss 11, p 1364 (2021)
In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through ap
Externí odkaz:
https://doaj.org/article/1ac36cc91cfa4fbb99c2ac67bbdfa340
Autor:
Ryan C. White, Michel Khoury, Matthew S. Wong, Hongjian Li, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, Steven P. DenBaars
Publikováno v:
Crystals, Vol 11, Iss 10, p 1168 (2021)
We examine full InGaN-based microLEDs on c-plane semi-relaxed InGaN substrates grown by metal organic chemical vapor deposition (MOCVD) that operate across a wide range of emission wavelengths covering nearly the entire visible spectrum. By employing
Externí odkaz:
https://doaj.org/article/c734a6b069ed4163b0332967acad3cb2
Publikováno v:
Journal of Services Marketing, 2013, Vol. 27, Issue 4, pp. 259-270.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/08876041311330744
Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In,Ga)N Alloy Quantum Barriers
Autor:
Cheyenne Lynsky, Guillaume Lheureux, Bastien Bonef, Kai Shek Qwah, Ryan C. White, Steven P. DenBaars, Shuji Nakamura, Yuh-Renn Wu, Claude Weisbuch, James S. Speck
Publikováno v:
Physical Review Applied. 17
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac3878b3189158efa1f296de33dfddf8
https://doi.org/10.1103/physrevapplied.17.054048
https://doi.org/10.1103/physrevapplied.17.054048
Autor:
Michel Khoury, Steven P. DenBaars, Michael Iza, Cheyenne Lynsky, David Sotta, Shuji Nakamura, Hongjian Li, Stacia Keller, Ryan C. White
Publikováno v:
Crystals, Vol 11, Iss 1364, p 1364 (2021)
Crystals; Volume 11; Issue 11; Pages: 1364
Crystals; Volume 11; Issue 11; Pages: 1364
In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::977877382908e782be35e4609f01a66f
https://www.mdpi.com/2073-4352/11/11/1364
https://www.mdpi.com/2073-4352/11/11/1364
Autor:
Stacia Keller, Ryan C. White, Cheyenne Lynsky, Hongjian Li, Matthew S. Wong, Shuji Nakamura, Michel Khoury, Michael Iza, David Sotta, Steven P. DenBaars
Publikováno v:
Crystals, Vol 11, Iss 1168, p 1168 (2021)
Crystals; Volume 11; Issue 10; Pages: 1168
Crystals; Volume 11; Issue 10; Pages: 1168
We examine full InGaN-based microLEDs on c-plane semi-relaxed InGaN substrates grown by metal organic chemical vapor deposition (MOCVD) that operate across a wide range of emission wavelengths covering nearly the entire visible spectrum. By employing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4969d4c69ee640ab1e644652ecbcadd4
https://www.mdpi.com/2073-4352/11/10/1168
https://www.mdpi.com/2073-4352/11/10/1168
Autor:
David Sotta, Shuji Nakamura, Stacia Keller, Michel Khoury, Steven P. DenBaars, Matthew S. Wong, Ryan C. White
Publikováno v:
Gallium Nitride Materials and Devices XVI.
We examine the MOCVD growth conditions on c-plane semi-relaxed InGaN substrates necessary for morphological improvement, defect reduction, and elimination of V-pits during epitaxy prior to the active region growth. V-pit defects can propagate through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c98758b95aad663c9082f15eaeef7ae
https://doi.org/10.1117/12.2578655
https://doi.org/10.1117/12.2578655
Autor:
Steven P. DenBaars, James S. Speck, Wan Ying Ho, Ryan C. White, Shuji Nakamura, Cheyenne Lynsky, Yi Chao Chow
Publikováno v:
Journal of Crystal Growth. :126048
In this study, we experimentally investigated the role of V-defect density on the performance of green III-nitride LEDs grown on sapphire substrates by metalorganic chemical vapor deposition. We systematically varied the threading dislocation (TD) de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e48a6ce9bb1dab39741971489f7b3f5
https://doi.org/10.1016/j.jcrysgro.2021.126048
https://doi.org/10.1016/j.jcrysgro.2021.126048
Autor:
Shuji Nakamura, David Sotta, Stacia Keller, Feng Wu, Mariia Rozhavskaia, Ryan C. White, Michel Khoury, Steven P. DenBaars
Publikováno v:
Semiconductor Science and Technology. 36:015011
The MOCVD growth of InGaN:Si base layers on a semi-relaxed InGaN substrate, where growth is generally difficult due to the presence of V-pits, is examined. These V-pits can propagate through the crystal, causing severe morphological degradation and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c2878e8cb891c045e6b096699dd26e4
https://doi.org/10.1088/1361-6641/abc51c
https://doi.org/10.1088/1361-6641/abc51c