Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Ruzmetov, Dmitry"'
Autor:
Biswas, Abhijit, Xu, Mingfei, Fu, Kai, Zhou, Jingan, Xu, Rui, Puthirath, Anand B., Hachtel, Jordan A., Li, Chenxi, Iyengar, Sathvik Ajay, Kannan, Harikishan, Zhang, Xiang, Gray, Tia, Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Ruzmetov, Dmitry A., Shah, Pankaj B., Ivanov, Tony, Zhu, Hanyu, Zhao, Yuji, Ajayan, Pulickel M.
Publikováno v:
Appl. Phys. Lett. 121, 092105 (2022)
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser
Externí odkaz:
http://arxiv.org/abs/2209.00643
Autor:
Biswas, Abhijit, Ruan, Qiyuan, Lee, Frank, Li, Chenxi, Iyengar, Sathvik Ajay, Puthirath, Anand B., Zhang, Xiang, Kannan, Harikishan, Gray, Tia, Birdwell, A. Glen, Neupane, Mahesh R., Shah, Pankaj B., Ruzmetov, Dmitry A., Ivanov, Tony G., Vajtai, Robert, Tripathi, Manoj, Dalton, Alan, Yakobson, Boris I., Ajayan, Pulickel M.
Publikováno v:
Applied Materials Today, Volume 30, February 2023, 101734
Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excell
Externí odkaz:
http://arxiv.org/abs/2208.09469
Autor:
Biswas, Abhijit, Maiti, Rishi, Lee, Frank, Chen, Cecilia Y., Li, Tao, Puthirath, Anand B., Iyengar, Sathvik Ajay, Li, Chenxi, Zhang, Xiang, Kannan, Harikishan, Gray, Tia, Saadi, Md Abid Shahriar Rahman, Elkins, Jacob, Birdwell, A. Glen, Neupane, Mahesh R., Shah, Pankaj B., Ruzmetov, Dmitry A., Ivanov, Tony G., Vajtai, Robert, Zhao, Yuji, Gaeta, Alexander L., Tripathi, Manoj, Dalton, Alan, Ajayan, Pulickel M.
Publikováno v:
Nanoscale Horizons, 2023, 8, 641-651
Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budge
Externí odkaz:
http://arxiv.org/abs/2208.09468
Autor:
Biswas, Abhijit, Ruan, Qiyuan, Lee, Frank, Li, Chenxi, Iyengar, Sathvik Ajay, Puthirath, Anand B., Zhang, Xiang, Kannan, Harikishan, Gray, Tia, Birdwell, A. Glen, Neupane, Mahesh R., Shah, Pankaj B., Ruzmetov, Dmitry A., Ivanov, Tony G., Vajtai, Robert, Tripathi, Manoj, Dalton, Alan, Yakobson, Boris I., Ajayan, Pulickel M.
Publikováno v:
In Applied Materials Today February 2023 30
Publikováno v:
D. Ruzmetov, V. Chandrasekhar. - J. Magn. Magn. Mat. 320, 47 (2008)
We demonstrate a novel method allowing the study of the magnetic state dynamics of a single nanoparticle by means of electron transport measurements. Elliptical 550 nm x 240 nm permalloy nanoparticles are wired with non-magnetic leads for magnetotran
Externí odkaz:
http://arxiv.org/abs/1007.0958
Autor:
Ruzmetov, Dmitry, Gopalakrishnan, Gokul, Ko, Changhyun, Narayanamurti, Venkatesh, Ramanathan, Shriram
Publikováno v:
JOURNAL OF APPLIED PHYSICS 107, 114516 (2010)
Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the vicinity
Externí odkaz:
http://arxiv.org/abs/1006.4373
Autor:
Ruzmetov, Dmitry, Heiman, Don, Claflin, Bruce B., Narayanamurti, Venkatesh, Ramanathan, Shriram
Publikováno v:
Physical Review B 79, 153107 (2009)
Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at t
Externí odkaz:
http://arxiv.org/abs/1006.4376
Autor:
Ruzmetov, Dmitry, Seo, Yongho, Belenky, Land J., Kim, D. M., Ke, Xianglin, Sun, Haiping, Chandrasekhar, Venkat, Eom, Chang-Beom, Rzchowski, Mark S., Pan, Xiaoqing
Precise arrays of sub-100 nm diameter nanodots are fabricated from magnetic oxide perovskites with the total coverage area up to 5 mm2. Epitaxial single crystal structure of the nanodots is demonstrated by cross-sectional TEM. Low temperature MFM stu
Externí odkaz:
http://arxiv.org/abs/cond-mat/0507280
Autor:
Baxter, David V., Ruzmetov, Dmitry, Scherschligt, Julia, Sasaki, Y., Liu, X., Furdyna, J. K., Mielke, C. H.
We have measured the magnetoresistance in a series of Ga$_{1-x}$Mn$_x$As samples with 0.033$\le x \le$ 0.053 for three mutually orthogonal orientations of the applied magnetic field. The spontaneous resistivity anisotropy (SRA) in these materials is
Externí odkaz:
http://arxiv.org/abs/cond-mat/0202508
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