Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ruzhong Zhu"'
Publikováno v:
ACS Applied Electronic Materials. 5:2664-2669
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c5c7e93aafdc99e2ebab083c134e32
https://doi.org/10.1021/acsaelm.3c00137
https://doi.org/10.1021/acsaelm.3c00137
Autor:
Xi Zhang, Xiaoshuang Liu, Yazhe Wang, Ruzhong Zhu, Xuqing Zhang, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi
Publikováno v:
Semiconductor Science and Technology. 38:034001
In this letter, we optimize the flatness of 4H silicon carbide (4H-SiC) wafers by tuning the sequence of single-sided lapping, enlightened by the different mechanical properties of the Si face and C face of 4H-SiC. After wire sawing, the coarse lappi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1ea04035b7dadfc72e520b1384067f8
https://doi.org/10.1088/1361-6641/acb1ce
https://doi.org/10.1088/1361-6641/acb1ce
Publikováno v:
Journal of Crystal Growth. 600:126915
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eddd219d3d08e67a0a19860844c70a9
https://doi.org/10.1016/j.jcrysgro.2022.126915
https://doi.org/10.1016/j.jcrysgro.2022.126915
Autor:
Guang Yang, Hao Luo, Jiajun Li, Qinqin Shao, Yazhe Wang, Ruzhong Zhu, Xi Zhang, Lihui Song, Yiqiang Zhang, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang
Publikováno v:
Journal of Semiconductors. 43:122801
Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide (4H-SiC), which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers. In this work, we show that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39119d5b74855af48275077c718823dc
https://doi.org/10.1088/1674-4926/43/12/122801
https://doi.org/10.1088/1674-4926/43/12/122801