Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

Autor: Giaccherini A.[1], Russo F.[1], Carlà F.[2], Guerri A.[1], Picca R.[3], Cioffi N.[3], Cinotti S.[1], Montegrossi G.[4], Passaponti M.[1], Di Benedetto F.[3, Felici R.[6], Innocenti M. [1]

Publikováno v: Applied surface science 432 (2018): 53–59. doi:10.1016/j.apsusc.2017.07.294
info:cnr-pdr/source/autori:Giaccherini A.[1], Russo F.[1], Carlà F.[2], Guerri A.[1], Picca R.[3], Cioffi N.[3], Cinotti S.[1], Montegrossi G.[4], Passaponti M.[1], Di Benedetto F.[3,4], Felici R.[6], Innocenti M. [1]/titolo:Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size/doi:10.1016%2Fj.apsusc.2017.07.294/rivista:Applied surface science/anno:2018/pagina_da:53/pagina_a:59/intervallo_pagine:53–59/volume:432

Electrochemical Atomic Layer Deposition (E-ALD), exploiting surface limited electrodeposition of atomic layers, can easily grow highly ordered ultra-thin films and 2D structures. Among other compounds Cu x Zn y S grown by means of E-ALD on Ag(111) ha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::451e8aba9e8ae2e0b0388d7ebbc37084
https://doi.org/10.1016/j.apsusc.2017.07.294