Zobrazeno 1 - 10
of 434
pro vyhledávání: '"Russell D Dupuis"'
Autor:
Hoon Jeong, E. A. Garzda, Mi-Hee Ji, Minkyu Cho, Theeradetch Detchprohm, Shyh-Chiang Shen, A. N. Otte, Russell D. Dupuis
Publikováno v:
IEEE Journal of Quantum Electronics. 59:1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31ae02fcc6c3448180fd50642cfe903
https://doi.org/10.1109/jqe.2023.3266759
https://doi.org/10.1109/jqe.2023.3266759
Autor:
Chuan-Wei Tsou, Russell D. Dupuis, Zhiyu Xu, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Minkyu Cho, Hoon Jeong, Shyh-Chiang Shen
Publikováno v:
IEEE Transactions on Electron Devices. 68:2759-2763
We report high-performance homojunction GaN avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ion-implantation isolation method. High-quality p-i-n GaN layers were grown using metalorganic chemical vapor depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7cddaf09965101ffb480195027c5d2f
https://doi.org/10.1109/ted.2021.3069153
https://doi.org/10.1109/ted.2021.3069153
Autor:
Chuan-Wei Tsou, Minkyu Cho, Russell D. Dupuis, Can Cao, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Hoon Jeong, Zhiyu Xu
Publikováno v:
Journal of Electronic Materials. 50:4462-4468
Front-illuminated GaN-based p-i-n ultraviolet (UV) avalanche photodiodes (APDs) were grown by metalorganic chemical vapor deposition on a free-standing GaN substrate. X-ray diffraction measurements confirm the high crystal quality of the grown struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e6b99de25304ee4e3e5fe0d9827a16
https://doi.org/10.1007/s11664-021-08981-x
https://doi.org/10.1007/s11664-021-08981-x
Autor:
Yuto Ando, Frank Mehnke, Henri Bouchard, Zhiyu Xu, Alec M. Fischer, Shyh-Chiang Shen, Fernando A. Ponce, Theeradetch Detchprohm, Russell D. Dupuis
Publikováno v:
Journal of Crystal Growth. 607:127100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::124a43b9fad31f194661ad5cc68e9481
https://doi.org/10.1016/j.jcrysgro.2023.127100
https://doi.org/10.1016/j.jcrysgro.2023.127100
Autor:
Russell D. Dupuis, Jiming Bao, Theeradetch Detchprohm, Shahab Shervin, Tain Tong, Kamrul Alam, R. L. Forrest, Mi-Hee Ji, Jae-Hyun Ryou, Sara Pouladi, Jie Chen, Mina Moradnia
Publikováno v:
Journal of Materials Chemistry C. 9:2243-2251
Flexible electronics and mechanically bendable devices based on Group III-N semiconductor materials are emerging; however, there are several challenges in manufacturing, such as cost reduction, device stability and flexibility, and device-performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::184a453bb4b09fe3558c4a53819cb415
https://doi.org/10.1039/d0tc04634e
https://doi.org/10.1039/d0tc04634e
Autor:
Russell D. Dupuis, Frank Mehnke, Alec M. Fischer, Zhiyu Xu, Henri K. Bouchard, Theeradetch Detchprohm, Shyh-Chiang Shen, Fernando A. Ponce
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d335ea7ae0ef41ec0a4b1130b530ee87
https://doi.org/10.1117/12.2607411
https://doi.org/10.1117/12.2607411
Autor:
Russell D. Dupuis, Hoon Jeong, Minkyu Cho, Zhiyu Xu, Shyh-Chiang Shen, Theeradetch Detchprohm, A. Nepomuk Otte
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2844e859a230267b731ea815b5b01750
https://doi.org/10.1117/12.2608330
https://doi.org/10.1117/12.2608330
Autor:
Marzieh Bakhtiary-Noodeh, Shyh-Chiang Shen, Russell D. Dupuis, Minkyu Cho, Zhiyu Xu, Theeradetch Detchphrom
Publikováno v:
ECS Transactions. 98:49-59
Gallium-nitride and related materials have become suitable semiconductor platforms for next-generation power electronic devices. This materials system leverages unique properties of wider energy bandgap, higher carrier mobility, and ultrashort carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f764b2b9848fbbd489e36c7bcded90a1
https://doi.org/10.1149/09806.0049ecst
https://doi.org/10.1149/09806.0049ecst
Autor:
Young Jae Park, Shyh-Chiang Shen, Yuh-Shiuan Liu, P. Douglas Yoder, Theeradetch Detchprohm, Ping Chen, Russell D. Dupuis
Publikováno v:
Journal of Electronic Materials. 49:2326-2331
The thermal effect of the growth temperature on interface morphology and stimulated emission in ultraviolet AlGaN/InGaN multiple quantum wells (MQWs) are experimentally investigated. During the MOCVD epitaxial growth of AlGaN/InGaN MQWs, the ramping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8524377df6876a7aefaead92aba6eb
https://doi.org/10.1007/s11664-019-07932-x
https://doi.org/10.1007/s11664-019-07932-x
Publikováno v:
Journal of Crystal Growth. 602:126962
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f3fad963b182972117bf16478eb1f1a
https://doi.org/10.1016/j.jcrysgro.2022.126962
https://doi.org/10.1016/j.jcrysgro.2022.126962