Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Russ Dudley"'
Autor:
Beth Tellman, Robert I McDonald, Joshua H Goldstein, Adrian L Vogl, Martina Flörke, Daniel Shemie, Russ Dudley, Rachel Dryden, Paulo Petry, Nathan Karres, Kari Vigerstol, Bernhard Lehner, Fernando Veiga
Publikováno v:
PLoS ONE, Vol 13, Iss 12, p e0209470 (2018)
Governments, development banks, corporations, and nonprofits are increasingly considering the potential contribution of watershed conservation activities to secure clean water for cities and to reduce flood risk. These organizations, however, often l
Externí odkaz:
https://doaj.org/article/030494158bd84494bb32989d1e9fe8d6
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:001536-001552
Interconnects for Advanced Packaging are getting smaller and come in a variety of sizes, shapes, and materials. The height, diameter, shape, and the absence/presence of these interconnects are critical and must be monitored across the device and wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::403b966d4bbb8e72ef669b18927a9306
https://doi.org/10.4071/2014dpc-wp16
https://doi.org/10.4071/2014dpc-wp16
Autor:
Daniel Shemie, Robert I. McDonald, Kari Vigerstol, Adrian L. Vogl, Nathan Karres, Paulo Petry, Fernando Veiga, Beth Tellman, Martina Flörke, Russ Dudley, Joshua H. Goldstein, Bernhard Lehner, Rachel Dryden
Publikováno v:
PLoS ONE, Vol 13, Iss 12, p e0209470 (2018)
PLoS ONE
PLoS ONE
Governments, development banks, corporations, and nonprofits are increasingly considering the potential contribution of watershed conservation activities to secure clean water for cities and to reduce flood risk. These organizations, however, often l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd0e2cac69ead7f1aa0cfa9e765711d0
https://doi.org/10.1371/journal.pone.0209470
https://doi.org/10.1371/journal.pone.0209470
Publikováno v:
International Symposium on Microelectronics. 2013:000558-000563
As the industry is investigating more cost-effective and reliable Cu Pillar Bumping as well as TSV, a key enabler is process control through inspection and metrology. In working with the industry, Rudolph has developed a suite of solutions that incor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::492d6d905e8b0bd51c28f149c0f3a679
https://doi.org/10.4071/isom-2013-wa52
https://doi.org/10.4071/isom-2013-wa52
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 23:419-422
A quantitative metrology technique is required to provide quality control necessary for production-worthy through-silicon-via (TSV) etch. This paper reports on backside infrared interferometric wafer thickness sensing for highly repeatable, nondestru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09ebb232aead714fe8743fc38ea4adea
https://doi.org/10.1109/tsm.2010.2046657
https://doi.org/10.1109/tsm.2010.2046657
Autor:
Dario Alliata, Nicolas Devanciard, Darcy Hart, Stephane Minoret, Prasad Bachiraju, John Thornell, Stephane Rey, David S. Marx, Carlos Beitia, Russ Dudley, Thomas Magis
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper, we present an integrated in-line solution, combining automatic visual inspection/classification with unique 2D/3D measurement technologies, which was used to characterize the defectivity and the morphology of open through silicon via (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c67e5534d4e0823e0cce0a1be2a040eb
https://doi.org/10.1109/asmc.2015.7164457
https://doi.org/10.1109/asmc.2015.7164457
Autor:
David S. Marx, David L. Grant, Russ Dudley, Rajiv Roy, Bill Kalenian, Michael Kirkpatrick, Thomas E. Brake
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
There are significant challenges in obtaining a controlled and consistent remaining silicon thickness (RST) above through silicon vias (TSVs) because of the need to support the thin device wafer, which will often be thinned to less than 100 microns d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cec21b5b683a6696415a35d1a08c5317
https://doi.org/10.1109/asmc.2014.6846996
https://doi.org/10.1109/asmc.2014.6846996
Autor:
C. Musante, D. Vanslette, D. Dang, David S. Marx, T. Doan, Russ Dudley, J. Trapasso, David L. Grant, J. Gambino
Publikováno v:
2013 IEEE 63rd Electronic Components and Technology Conference.
Through-silicon-via (TSV) technology is conceptually simple, but there are many process control issues in volume manufacturing. An important parameter is TSV depth, because the product yield will be reduced if TSV depth is either too shallow or too d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36d763c141731b571d3a9142ac4c1e30
https://doi.org/10.1109/ectc.2013.6575575
https://doi.org/10.1109/ectc.2013.6575575
Autor:
Bart Swinnen, David S. Marx, Sandip Halder, M. Maenhoudt, Maurice Ford, Gerald Beyer, Andy Miller, David L. Grant, Eric Beyne, Russ Dudley
Publikováno v:
2012 IEEE 62nd Electronic Components and Technology Conference.
As semiconductor devices become smaller and smaller, to keep up with Moore's law, their manufacturing cost increases. Transistors have been continuing to scale and improve in performance. However, the performance improvement gained by scaling is grad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29839226f93895dd5819f172970bfdfd
https://doi.org/10.1109/ectc.2012.6248894
https://doi.org/10.1109/ectc.2012.6248894
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
The main objective of this study was to identify if there is any change in wafer warpage after bevel clean process, which might lead to higher film stress at device area in further processes. Correlation between bevel film Etch Rate (ER) and wafer wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3243b295e9ea00678c6e8d61b80eb07b
https://doi.org/10.1109/asmc.2011.5898194
https://doi.org/10.1109/asmc.2011.5898194