Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Ruslan, Muydinov"'
Autor:
Igor Konyashin, Ruslan Muydinov, Antonio Cammarata, Andrey Bondarev, Marin Rusu, Athanasios Koliogiorgos, Tomáš Polcar, Daniel Twitchen, Pierre-Olivier Colard, Bernd Szyszka, Nicola Palmer
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-13 (2024)
Abstract Carbon is considered to exist in three basic forms: diamond, graphite/graphene/fullerenes, and carbyne, which differ in a type of atomic orbitals hybridization. Since several decades the existence of the fourth basic carbon allotropic form w
Externí odkaz:
https://doaj.org/article/e7a0663549f94f3b929dc68fa4346b53
Autor:
Fangfang Huo, Ruslan Muydinov, Bertwin Bilgrim Otto Seibertz, Can Wang, Manuel Hartig, Nivin Alktash, Peng Gao, Bernd Szyszka
Publikováno v:
Heliyon, Vol 10, Iss 10, Pp e30943- (2024)
SnO2 and tantalum doped SnO2 (TTO) thin films were prepared using reactive hollow cathode gas flow sputtering (GFS) on glass substrates. An in-situ heating process under vacuum preceded the sputtering. The resistivity of the tin oxide films was reduc
Externí odkaz:
https://doaj.org/article/cce90d6dd58446bbb6b151561b576c07
Autor:
Sri Hari Bharath Vinoth Kumar, Ruslan Muydinov, Natalia Maticiuc, Nivin Alktash, Marin Rusu, Bertwin Bilgrim Otto Seibertz, Hans Köbler, Antonio Abate, Thomas Unold, Iver Lauermann, Bernd Szyszka
Publikováno v:
Advanced Energy & Sustainability Research, Vol 5, Iss 4, Pp n/a-n/a (2024)
Nickel oxide (NiO1+δ) is a versatile material used in various fields such as optoelectronics, spintronics, electrochemistry, and catalysis which is prepared with a wide range of deposition methods. Herein, for the deposition of NiO1+δ films, the re
Externí odkaz:
https://doaj.org/article/a7930723beee4189b8b353d2c84caec3
Publikováno v:
ACS Applied Materials & Interfaces. 14:55051-55061
Autor:
Josefa Ibaceta-Jaña, Manjusha Chugh, Alexander S. Novikov, Hossein Mirhosseini, Thomas D. Kühne, Bernd Szyszka, Markus R. Wagner, Ruslan Muydinov
Publikováno v:
The Journal of Physical Chemistry C. 126:16215-16226
Hydrogen bonds impact many material properties due to the bond directionality and collective strength. For them to exist, the atoms connected to hydrogen should possess high electronegativity, the distance between the interacting atoms should be less
Autor:
Sri Hari Bharath Vinoth Kumar, Josefa Ibaceta-Jaña, Natalia Maticuic, Krystian Kowiorski, Matthias Zelt, Ulrich Gernert, Ludwika Lipińska, Bernd Szyszka, Rutger Schlatmann, Uwe Hartmann, Ruslan Muydinov
Publikováno v:
C, Vol 7, Iss 4, p 71 (2021)
Atmospheric pressure plasma jets (APPJ) are widely used in industry for surface cleaning and chemical modification. In the recent past, they have gained more scientific attention especially in the processing of carbon nanomaterials. In this work, a n
Externí odkaz:
https://doaj.org/article/0e2a723849a1416781a4a1fe9c610083
Autor:
Denis Bernsmeier, Sören Selve, Jörg Nissen, Natalia Maticiuc, Josefa Ibaceta-Jaña, Bernd Szyszka, Ruslan Muydinov
Publikováno v:
ChemPhysChem.
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 382 (2021)
The past decade has seen enormous efforts in the investigation and development of reduced graphene oxide (GO) and its applications. Reduced graphene oxide (rGO) derived from GO is known to have relatively inferior electronic characteristics when comp
Externí odkaz:
https://doaj.org/article/b0bc09a91612428097d4930713c37618
Autor:
Florian Ruske, Hasan A. Yetkin, Rutger Schlatmann, Ibrahim Simsek, Ruslan Muydinov, Reiner Klenk, Alejandra Villanueva Tovar, Bernd Szyszka, Tobias Bertram, Marin Rusu, Tim Kodalle, Christian A. Kaufmann, Josefa Ibaceta-Jaña
Publikováno v:
IEEE Journal of Photovoltaics. 11:648-657
In this contribution, the impact of thermal stress on Cu(In,Ga)Se $_{2}$ (CIGSe) thin film photovoltaic devices is investigated. The tolerance of such devices to high temperatures is of particular interest for processing transparent conductive oxides
Autor:
Ruslan Muydinov, Alexander Steigert, Markus Wollgarten, Paweł Piotr Michałowski, Ulrike Bloeck, Andreas Pflug, Darja Erfurt, Reiner Klenk, Stefan Körner, Iver Lauermann, Bernd Szyszka
Publikováno v:
Materials, Vol 12, Iss 2, p 266 (2019)
The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium wa
Externí odkaz:
https://doaj.org/article/3653fec451034fc7b9b31b63e9f9af7c