Two-dimensional electric-double-layer Esaki diode

Autor: Christopher L. Hinkle, Paolo Paletti, Alan Seabaugh, Susan K. Fullerton-Shirey, Ruoyu Yue

Publikováno v: npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-7 (2019)

Two-dimensional van der Waals materials offer unique advantages for the development of band-to-band tunneling devices given their lack of dangling bonds, atomically flat thickness and steep band edges. Here, we present the experimental demonstration

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fb8f636494b13c6481dbadacb2f5218
http://link.springer.com/article/10.1038/s41699-019-0101-y

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Autor: Xuanhe Zhao, Wei Kong, Doyoon Lee, Chanyeol Choi, Ruoyu Yue, Christopher L. Hinkle, Jagadeesh S. Moodera, Yong Ju Park, Han-Wool Yeon, Guanyu Zhou, Xin Li, Ruike Zhao, Kyusang Lee, Kuan Qiao, Hyun Kum, Sang-Hoon Bae, Jeehwan Kim, Jong Hyun Ahn, Abdallah Ougazzaden, Jaewoo Shim, Daniel Nezich, Yunbo Ou, Suresh Sundaram

Publikováno v: Science
Science, American Association for the Advancement of Science, 2018, 362 (6415), pp.665-670. ⟨10.1126/science.aat8126⟩
MIT web domain

No claim to original U.S. Government Works. Although flakes of two-dimensional (2D) heterostructures at the micrometer scale can be formed with adhesive-tape exfoliation methods, isolation of 2D flakes into monolayers is extremely time consuming beca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1d7c08f081b5829a68bfe9f37fb02a5
https://hal.archives-ouvertes.fr/hal-02158419

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi

Autor: Lee A, Walsh, Avery J, Green, Rafik, Addou, Westly, Nolting, Christopher R, Cormier, Adam T, Barton, Tyler R, Mowll, Ruoyu, Yue, Ning, Lu, Jiyoung, Kim, Moon J, Kim, Vincent P, LaBella, Carl A, Ventrice, Stephen, McDonnell, William G, Vandenberghe, Robert M, Wallace, Alain, Diebold, Christopher L, Hinkle

Publikováno v: ACS nano. 12(6)

The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::c291beb729e2cf068c52351bf92c0598
https://pubmed.ncbi.nlm.nih.gov/29874037

WSe (2− x ) Te x alloys grown by molecular beam epitaxy

Autor: Ruoyu Yue, Adam T. Barton, Guanyu Zhou, Robert M. Wallace, Rafik Addou, Christopher R. Cormier, Lee A. Walsh, Christopher M. Smyth, Luigi Colombo, Christopher L. Hinkle

Publikováno v: 2D Materials. 6:045027

National Institute of Standards and Technology (Award Number 70NANB17H041); National Science Foundation (ECCS Award Numbers 1917025 and 1802166)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8df96f467a9bcb2ccbf0452fd5a75d81
https://doi.org/10.1088/2053-1583/ab334d

High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth

Autor: Christopher R. Cormier, Ruoyu Yue, Jiyoung Kim, William G. Vandenberghe, Shahin Honari, Robert M. Wallace, Rafik Addou, Qingxiao Wang, Lanxia Cheng, Christopher M. Smyth, Moon J. Kim, Akash Laturia, Christopher L. Hinkle, Guanyu Zhou

Publikováno v: Advanced Materials. 30:1803109

The transfer-free direct growth of high-performance materials and devices can enable transformative new technologies. Here, room-temperature field-effect hole mobilities as high as 707 cm2 V-1 s-1 are reported, achieved using transfer-free, low-tempe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4734c63a61b1008197549a611b32e50
https://doi.org/10.1002/adma.201803109