Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Ruoyu Hou"'
Publikováno v:
Behavioral Sciences, Vol 14, Iss 9, p 741 (2024)
Previous research has shown a clear self-reference effect in our memory. However, the question arises as to whether this effect could extend to higher cognitive domains such as metamemory. Thus, this study examined the effects of different encoding t
Externí odkaz:
https://doaj.org/article/8c1de9fb1b004cd693ae32794af64a84
Publikováno v:
IEEE Access, Vol 8, Pp 70553-70571 (2020)
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si)
Externí odkaz:
https://doaj.org/article/b0d98dfc9d8a4ec38a4609e8330d8bb5
Autor:
Ruoyu Hou
Publikováno v:
Encyclopedia of Electrical and Electronic Power Engineering ISBN: 9780128232118
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ba0f5d0ded68a9fefcfabce1ba88a1c
https://doi.org/10.1016/b978-0-12-821204-2.00002-7
https://doi.org/10.1016/b978-0-12-821204-2.00002-7
Autor:
Rahil Samani, Maryam Alizadeh, Ruoyu Hou, Juncheng Lu, Ignacio Galiano Zurbriggen, Andrew M. Knight
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Publikováno v:
IEEE Transactions on Power Electronics. 36:6978-6987
Similar to other power semiconductors, gallium nitride enhancement-mode high-electron-mobility transistors (GaN E-HEMTs) require short-circuit protection (SCP) or overcurrent protection (OCP) in practical applications. However, the fast-switching cha
Publikováno v:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC).
Publikováno v:
IEEE Transactions on Power Electronics. 35:7405-7418
In recent years, there has been a trend for improved performance in semiconductor switches, allowing power electronic systems to achieve higher efficiency and higher power density. This desired improvement has led to the adoption of wide-bandgap devi
Publikováno v:
IEEE Transactions on Transportation Electrification. 6:540-553
Gallium nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve high frequency and high efficiency due to its excellent switching performance compared with conventional Si transistors. Nevertheless, GaN HEMTs exhibit a m
Publikováno v:
IEEE Access, Vol 8, Pp 70553-70571 (2020)
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si)
Publikováno v:
2020 IEEE Applied Power Electronics Conference and Exposition (APEC).
GaN E-HEMTs eliminate the inherent parasitic diodes compared to Si MOSFETs and have faster switching speeds and slew rates [1]. These and other improved characteristics of GaN E-HEMTs have reduced system size and weight, have delivered lower system c