Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ruo-Yin Liao"'
Autor:
Cun-Bo Liu, Ruo-Yin Liao, Hsuan-Han Chen, Zhi-Wei Zheng, Kuan-Hung Su, I-Cheng Lin, Ting-An Liang, Ping-Yu Lin, Chen-Hao Wen, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ching-Chien Huang
Publikováno v:
Materials Research Express, Vol 11, Iss 4, p 046404 (2024)
In this work, we adopt a low-temperature sustainable plasma treatment approach for the fabrication of ferroelectric memory devices. From our experimental results, we found that the ferroelectric polarization characteristics of HfAlO _x ferroelectric
Externí odkaz:
https://doaj.org/article/9e754756a3e248efa43ac4949ad56f3f
Autor:
Hsuan-Han Chen, Ruo-Yin Liao, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ching-Chien Huang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 947-952 (2022)
In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featu
Externí odkaz:
https://doaj.org/article/3fa5f8ba82e34d16a3e80f598941d8cb
Autor:
Ruo-Yin Liao, Hsuan-Han Chen, Ping-Yu Lin, Ting-An Liang, Kuan-Hung Su, I-Cheng Lin, Chen-Hao Wen, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Hu Cheng
Publikováno v:
Materials; Volume 16; Issue 9; Pages: 3306
In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9408389b9678f56858bbdc719df2f762
https://doi.org/10.3390/ma16093306
https://doi.org/10.3390/ma16093306
Autor:
Yi-Wei Fang, Zih-Jing Yang, Ruo-Yin Liao, Pei-Tien Chen, Cun-Bo Liu, Kai-Yang Huang, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Wu-Ching Chou, Shih-Hao Lin, Ye Zhou
Publikováno v:
Thin Solid Films. 757:139395
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f61dca8bae99c525560abed738f374e
https://doi.org/10.1016/j.tsf.2022.139395
https://doi.org/10.1016/j.tsf.2022.139395
Autor:
Chun-Hu Cheng, Wei-Ting Chen, Kuan-Hsiang Lin, Hsuan-Han Chen, Ruo-Yin Liao, Ching-Chien Huang, Shih-Hao Lin, Hsiao-Hsuan Hsu
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:083013
In this work, we studied the temperature dependences of endurance cycling properties on atomic layer deposition (ALD) HfAlO metal-ferroelectric-metal (MFM) capacitor in the range from 25 °C, 40 °C, 50 °C and 75 °C. Base on experiment results, it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95032e698715475590bbc4849aeb85de
https://doi.org/10.1149/2162-8777/ac8954
https://doi.org/10.1149/2162-8777/ac8954
Autor:
Zhong-Ying Huang, Hsuan-Han Chen, Ruo-Yin Liao, Hsiao-Hsuan Hsu, Kuan-Hsiang Lin, Wei-Ting Chen, Shih-Hao Lin, Ching-Chien Huang, Wu-Ching Chou, Chun-Hu Cheng
Publikováno v:
Thin Solid Films. 755:139345
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c4cf6bea74d1ce937f606a6125dbdbb
https://doi.org/10.1016/j.tsf.2022.139345
https://doi.org/10.1016/j.tsf.2022.139345
Autor:
Ruo-Yin Liao, Chih-Chin Liang
Publikováno v:
IJIIS: International Journal of Informatics and Information Systems, Vol 3, Iss 3, Pp 114-120 (2021)
Consumers considering whether or not to queue make their decisions based on queuing size and the expecting waiting time. If a consumer is frustrated because he / she cannot know how long will wait, he / she will quit from a Consumers who are frustrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6257b0b3d22aec17fdce2ca7e02bfbc
https://doi.org/10.47738/ijiis.v3i1.94
https://doi.org/10.47738/ijiis.v3i1.94
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 14:2000356
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::154f4af6de1155617761228dd8e72051
https://doi.org/10.1002/pssr.202000356
https://doi.org/10.1002/pssr.202000356