Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Runtao Zhao"'
Publikováno v:
Frontiers in Cardiovascular Medicine, Vol 10 (2023)
BackgroundBlood pressure variability (BPV) obtained from ambulatory blood pressure monitoring (ABPM) has been demonstrated to accurately predict the risk of cerebrovascular events and death in hypertension patients, however, the association between B
Externí odkaz:
https://doaj.org/article/82e8a1b560b54d29b29aaf6d437ee162
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5b88b73a117825f8c4d4bbee494d600
https://doi.org/10.2139/ssrn.4098665
https://doi.org/10.2139/ssrn.4098665
Publikováno v:
ECS Transactions. 44:609-612
In the semiconductor manufacturing industry, W CMP has been widely used in both in FEOL and BEOL. However, in the advanced technology (≤65nm), WCMP is used primarily in FEOL. For FEOL WCMP process, dishing erosion performance is very critical. If t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::464ad36d5edb3756813df81defaa81f7
https://doi.org/10.1149/1.3694376
https://doi.org/10.1149/1.3694376
Publikováno v:
ECS Transactions. 44:553-557
In this paper, a real-time profile control (RTPC) system in Cu CMP is introduced. The system mainly contains two parts: 1). Real-time metal thickness monitoring based on electromagnetic induction of eddy current in conductive metal layer; 2). Real-ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c870cdd9aa4ba3b00acbb53ed9b4853
https://doi.org/10.1149/1.3694368
https://doi.org/10.1149/1.3694368
Publikováno v:
ECS Transactions. 60:637-639
The effect of the slurry delivery loop on micro scratch defects in Cu CMP was investigated. Three different kinds of slurry delivery loops were designed. Test results showed that the third slurry delivery loop was the best and reduced micro scratch d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e42d56757bec6b99d2b7f08ac88661ba
https://doi.org/10.1149/06001.0637ecst
https://doi.org/10.1149/06001.0637ecst
Publikováno v:
ECS Transactions. 27:539-544
In this paper, a silicon CMP process has been developed inside semiconductor fabrication to reclaim bare silicon wafers for cost and time reductions. Firstly, the high level defect after CMP was encountered and mainly particle; after related polishin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eaa89726730e00f552ba585f717b071
https://doi.org/10.1149/1.3360671
https://doi.org/10.1149/1.3360671
Publikováno v:
ECS Transactions. 18:441-446
In this paper, two particular kinds of defects are investigated. The number of Queue-time defects is strongly impacted by environmental conditions. In the ambient environment, Q-time defects form easily and the number increases greatly with longer qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38affd6b1dd00e531b6fc8bb74e9401d
https://doi.org/10.1149/1.3096483
https://doi.org/10.1149/1.3096483
Publikováno v:
ECS Transactions. 52:513-515
Continuously shrinking dimensions in VLSI manufacturing introduces new challenges in copper CMP. One of the critical challenges is the requirement for surface flatness after bulk copper removal on Platen 1. A new metrology has been deployed for the P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23210c59a82c983b52dff4e03cbddaf0
https://doi.org/10.1149/05201.0513ecst
https://doi.org/10.1149/05201.0513ecst