Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Rung-Jiun Lin"'
Autor:
Rung-Jiun Lin, 林榮君
102
Self-assembly is to coalescence many tiny elements to form a component by the self-interaction force, meaning that microstructures automatically assemble on the substrate. When the device miniaturization makes the artificial or mechanical ma
Self-assembly is to coalescence many tiny elements to form a component by the self-interaction force, meaning that microstructures automatically assemble on the substrate. When the device miniaturization makes the artificial or mechanical ma
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/11545404715353377126
Autor:
Rung-jiun Lin, 林融駿
100
In recent years, the awareness of residual content of pesticides in agricultural products has been accentuated gradually, and it also has been noted that an appropriate fertilization can reduce the use of pesticides in plant diseases control
In recent years, the awareness of residual content of pesticides in agricultural products has been accentuated gradually, and it also has been noted that an appropriate fertilization can reduce the use of pesticides in plant diseases control
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/48186802521885541432
Autor:
Rung-Jiun Lin, 林榮君
96
Faceting and missing-row of Pt surface reconstruction are observed by field ion microscopy (FIM). In order to reducing the surface energy, it may facet and forms the missing-row on the surface. In the point of view for faceting, while anneal
Faceting and missing-row of Pt surface reconstruction are observed by field ion microscopy (FIM). In order to reducing the surface energy, it may facet and forms the missing-row on the surface. In the point of view for faceting, while anneal
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/36m6nc
Autor:
Chih-Hsun Chu, Shih-Hsin Chang, Te-Fu Chang, Chih-Feng Chiang, Rung-Jiun Lin, Chia-Hsiang Yen, Wan-Yi Liu, Pau-Sheng Kuo
Publikováno v:
Microelectronics Reliability. 64:387-389
Precise location of leakage in a P-well/N-well junction has been identified by an AFM (atomic force microscope)-based nanoprober. In order to provide the accurate position of the failure for further analysis, a new method was proposed by combining na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c0f5b7b4c621d501a16f34b7ca91904
https://doi.org/10.1016/j.microrel.2016.07.081
https://doi.org/10.1016/j.microrel.2016.07.081
Publikováno v:
Applied Surface Science. 309:90-94
The effect of annealing temperature on the faceting phenomena has been studied for pure molybdenum (Mo) and Mo tips covered with palladium (Pd), platinum (Pt), rhodium (Rh), or iridium (Ir) by field ion microscopy (FIM). For these Mo samples, three {
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::554b214cb2835e729bc726aab4881fcd
https://doi.org/10.1016/j.apsusc.2014.04.185
https://doi.org/10.1016/j.apsusc.2014.04.185
Autor:
Rung-Jiun Lin, Pau-Sheng Kuo, Qi Lin, Shih-Hsin Chang, Jonathan Chang, Chih-Hsun Chu, Hans Pan
Publikováno v:
International Symposium for Testing and Failure Analysis.
With technology scaling, semiconductor devices have become more prone to damage induced by SEM inspection. In this work, we find that today’s widely-used 0.5KeV SEM can also alter the electrical performance of the devices at 20nm technology node. V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b19e85bc0a76e15975065a453e9ae09
https://doi.org/10.31399/asm.cp.istfa2016p0125
https://doi.org/10.31399/asm.cp.istfa2016p0125
Publikováno v:
Journal of nanoscience and nanotechnology. 11(12)
Two kinds of new nano tips with potential to magnetic application are fabricated. One is a PtCo alloy pyramidal tip formed by surface faceting, the other is a Pt based Co tip formed by the epitaxy with a proper growth mode. Ultra high vacuum-field io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e092dbfd55b76af58cf40ed138353fa4
https://pubmed.ncbi.nlm.nih.gov/22408974
https://pubmed.ncbi.nlm.nih.gov/22408974
Autor:
Ing-Shouh Hwang, Hong-Shi Kuo, Chia-Lun Chiang, Rung-Jiun Lin, Tien T. Tsong, Tsu Yi Fu, Jin-Long Hou
Publikováno v:
2010 3rd International Nanoelectronics Conference (INEC).
Ultra high vacuum - field ion microscopy (UHV-FIM) with atomic resolution was used to study the methods of preparing ultra-sharp single atom tips. Several treatments including annealing, depositing, exposing to special gas, keep in a given atmosphere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db8647e0c0880432d3aa40a76e990cb8
https://doi.org/10.1109/inec.2010.5424585
https://doi.org/10.1109/inec.2010.5424585
Autor:
Tsu-Yi Fu, Chia-Lun Chiang, Rung-Jiun Lin, Jin-Long Hou, Hong-Shi Kuo, Ing-Shouh Hwang, Tsong, T.T.
Publikováno v:
Nanoelectronics Conference (INEC), 2010 3rd International; 2010, p142-143, 2p