Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Run-Hua Huang"'
Autor:
Lin-Yue Liu, Ling Wang, Peng Jin, Jin-Liang Liu, Xian-Peng Zhang, Liang Chen, Jiang-Fu Zhang, Xiao-Ping Ouyang, Ao Liu, Run-Hua Huang, Song Bai
Publikováno v:
Sensors, Vol 17, Iss 10, p 2334 (2017)
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed
Externí odkaz:
https://doaj.org/article/04b386a8c22b442d9961419a6c220140
Publikováno v:
Materials Science Forum. 954:133-138
The mechanism of threshold voltage shift was studied. It is believed that the instability in threshold voltage during gate bias stress is due to capture of electrons by the SiC/gate dielectric interface traps and the gate dielectric near interface tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c42e3f8b69e920641a415f24a7ee0b
https://doi.org/10.4028/www.scientific.net/msf.954.133
https://doi.org/10.4028/www.scientific.net/msf.954.133
Publikováno v:
Materials Science Forum. :579-582
High voltage 4H-SiC Ti Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1700 V and forward current of 5 A has been fabricated. A low reverse leakage current below 3.8×10-5A/cm2at the bias voltage of -1700 V has been obtained.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5442f40ff4df4ca2c28da33d33ff6600
https://doi.org/10.4028/www.scientific.net/msf.821-823.579
https://doi.org/10.4028/www.scientific.net/msf.821-823.579
Publikováno v:
Applied Mechanics and Materials. :1034-1037
1200V-15A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on SiC epitaxy and device technology. By adopting the proper SBD metal,optimized structures and fabrication process, we succeeded in achieving good balance bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4644bc096784919adf5e47d52671842e
https://doi.org/10.4028/www.scientific.net/amm.713-715.1034
https://doi.org/10.4028/www.scientific.net/amm.713-715.1034
Publikováno v:
Applied Mechanics and Materials. :1023-1026
3.3kV and 4.5kV 4H-SiC junction barrier Schottky (JBS) diodes with floating guard rings edge termination have been fabricated. The 3.3kV device with 33μm 2.7E15 cm-3epilayer and 5.5Х5.5mm2schottky contact area has a blocking voltage (Vb) of 3.9 kV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2988e141591397406f2dc8435e9bb1b0
https://doi.org/10.4028/www.scientific.net/amm.713-715.1023
https://doi.org/10.4028/www.scientific.net/amm.713-715.1023
Publikováno v:
Applied Mechanics and Materials. :1434-1437
Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. We have demonstrated continuous improvement in blocking voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08df8d0ad2e29902db6acebab8fb12e7
https://doi.org/10.4028/www.scientific.net/amm.716-717.1434
https://doi.org/10.4028/www.scientific.net/amm.716-717.1434
Publikováno v:
Materials Science Forum. :800-803
4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07d51b65435a2213325f0a85c318bffb
https://doi.org/10.4028/www.scientific.net/msf.778-780.800
https://doi.org/10.4028/www.scientific.net/msf.778-780.800
Publikováno v:
Advanced Materials Research. :741-744
High voltage 4H-SiC Ni Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1000V and forward current of 1A has been fabricated. A low reverse leakage current below 4.7×10-6A/cm2 at the bias voltage of-1000V has been obtained. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b6cfd073202366d94d65cc32c67c6af
https://doi.org/10.4028/www.scientific.net/amr.846-847.741
https://doi.org/10.4028/www.scientific.net/amr.846-847.741
Publikováno v:
Advanced Materials Research. :737-740
4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5125e944e69081d176bd303adb15b503
https://doi.org/10.4028/www.scientific.net/amr.846-847.737
https://doi.org/10.4028/www.scientific.net/amr.846-847.737
Publikováno v:
Advanced Materials Research. 827:282-286
SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a J
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b778a67ca6f75da826756a3232415a98
https://doi.org/10.4028/www.scientific.net/amr.827.282
https://doi.org/10.4028/www.scientific.net/amr.827.282