Zobrazeno 1 - 10
of 695
pro vyhledávání: '"Rumyantsev S"'
Autor:
Mohammadzadeh, A., Rehman, A., Kargar, F., Rumyantsev, S., Smulko, J. M., Knap, W., Lake, R. K., Balandin, A. A.
We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detec
Externí odkaz:
http://arxiv.org/abs/2104.14051
Autor:
Sai, P., Potashin, S. O., Szola, M., Yavorskiy, D., Cywinski, G., Prystawko, P., Lusakowski, J., Ganichev, S. D., Rumyantsev, S., Knap, W., Kachorovskii, V. Yu.
Publikováno v:
Phys. Rev. B 104, 045301 (2021)
We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures superimposed with lateral superlattice formed by dual-grating gate structure. We demonstrate that irradiation of the superlattice with terahertz beam results in the d
Externí odkaz:
http://arxiv.org/abs/2102.12791
Autor:
Dub, M., Sai, P., Ivonyak, Y., But, D. B., Kacperski, J., Prystawko, P., Kucharski, R., Słowikowski, M., Cywiński, G., Knap, W., Rumyantsev, S.
Publikováno v:
Journal of Applied Physics; 5/21/2024, Vol. 135 Issue 19, p1-9, 9p
Autor:
Geremew, A., Rumyantsev, S., Kargar, F., Debnath, B., Nosek, A., Bloodgood, M., Bockrath, M., Salguero, T., Lake, R. K., Balandin, A. A.
Publikováno v:
ACS Nano, 13, 7231 (2019)
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The
Externí odkaz:
http://arxiv.org/abs/1903.06050
Autor:
Geremew, A., Kargar, F., Zhang, E. X., Zhao, S. E., Aytan, E., Bloodgood, M. A., Salguero, T. T., Rumyantsev, S., Fedoseyev, A., Fleetwood, D. M., Balandin, A. A.
Publikováno v:
Nanoscale, 11, 8380 - 8386 (2019)
Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malf
Externí odkaz:
http://arxiv.org/abs/1901.00551
Publikováno v:
Applied Physics Letters, 114, 090601 (2019)
Magnonics is a rapidly developing subfield of spintronics, which deals with devices and circuits that utilize spin currents carried by magnons - quanta of spin waves. Magnon current, i.e. spin waves, can be used for information processing, sensing, a
Externí odkaz:
http://arxiv.org/abs/1810.01500
Autor:
Rehman, A. *, Smirnov, S., Krajewska, A., But, D.B., Liszewska, M., Bartosewicz, B., Pavlov, K., Cywinski, G., Lioubtchenko, D., Knap, W., Rumyantsev, S. *
Publikováno v:
In Materials Research Bulletin February 2021 134
We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as eth
Externí odkaz:
http://arxiv.org/abs/1507.00308
Publikováno v:
IEEE Electron Device Letters, 36, 517 (2015)
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have adv
Externí odkaz:
http://arxiv.org/abs/1503.01823
Publikováno v:
Journal of Applied Physics, 117, 064301 (2015)
The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold
Externí odkaz:
http://arxiv.org/abs/1412.6698