Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Rulian Wen"'
Publikováno v:
Nanomaterials, Vol 9, Iss 1, p 66 (2019)
We fabricated a complex transparent conductive electrode (TCE) based on Ga2O3 for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga2O3, a 7 nm Ag, and a 15 nm Ga2O3, forming a ITO/Ga2O3/Ag/Ga2O3 multil
Externí odkaz:
https://doaj.org/article/3995243d789c4cffb97123e972887097
Publikováno v:
IEEE Transactions on Electron Devices. 65:4334-4339
We investigate a method to improve the efficiency of green InGaN light-emitting diodes (LEDs) using various metal-doped indium tin oxide (ITO) transparent contact layers. The resistance and transmittance of metal-doped ITO with different metal thickn
Publikováno v:
Materials Science in Semiconductor Processing. 79:61-65
In this paper, we report the effect of the SiO2 photonic crystals (PhCs) on the enhancement of light-output power (LOP) in the UV, blue and green InGaN light-emitting diodes (LEDs). The SiO2 PhCs were fabricated by an UV-nanoimprint lithography techn
Publikováno v:
Nanomaterials
Volume 9
Issue 1
Nanomaterials, Vol 9, Iss 1, p 66 (2019)
Volume 9
Issue 1
Nanomaterials, Vol 9, Iss 1, p 66 (2019)
We fabricated a complex transparent conductive electrode (TCE) based on Ga2O3 for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga2O3, a 7 nm Ag, and a 15 nm Ga2O3, forming a ITO/Ga2O3/Ag/Ga2O3 multil