Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Ruizhu Wu"'
Autor:
Chengjun Shen, Saeed Jahdi, Juefei Yang, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor
Publikováno v:
IEEE Open Journal of the Industrial Electronics Society, Vol 3, Pp 65-80 (2022)
The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV and high operating temperatures. In this paper, the advantages of the 4H-SiC NPN BJTs in
Externí odkaz:
https://doaj.org/article/a5c5fff66eea4081a9f674b73f2a6ffa
Autor:
Juefei Yang, Saeed Jahdi, Bernard Stark, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor
Publikováno v:
IEEE Open Journal of the Industrial Electronics Society, Vol 3, Pp 188-202 (2022)
In this paper, the crosstalk-induced shoot-through current and induced gate voltage of SiC planar MOSFETs, SiC symmetrical double-trench MOSFETs and SiC asymmetrical double-trench MOSFETs is investigated on a half-bridge circuit to analyse the impact
Externí odkaz:
https://doaj.org/article/c634df4c4ed7429598ca8dfdf01b2c4d
Publikováno v:
Energies, Vol 14, Iss 20, p 6834 (2021)
This paper investigates the impact of parameter variation between parallel connected SiC MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected devices with different switching rates, junction temperatures and thresho
Externí odkaz:
https://doaj.org/article/434b566e05ac4848bfad6ec9fd93f08b
Publikováno v:
The Journal of Engineering (2019)
This study presents a study on the time when the short-circuit fault current in an MV distribution network will cross the zero point in the presence of DC offset affected by the local synchronous and/or induction machines. The motivation of the study
Externí odkaz:
https://doaj.org/article/3555ee9fcc694971b11b2c60ef32ad3a
Publikováno v:
The Journal of Engineering (2019)
The presence of distributed generation (DG) in a power distribution network can cause difficulties in managing the voltage, power flow and fault level as the network was designed for supplying passive loads. This study focuses on the control of a bac
Externí odkaz:
https://doaj.org/article/41ffbb703f7047929e0fd445c28de5a4
Solder degradation is still a main failure mechanism for power semiconductor modules. This study proposes a monitoring method to detect the relative change in heat dissipation from a module in two opposing directions, affected by the degradation: upw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34414df5f7cba7c1a23a9371b42c7e48
http://wrap.warwick.ac.uk/164081/1/WRAP-Monitoring-power-module-solder-degradation-heat-dissipation-two-opposite-directions-2022.pdf
http://wrap.warwick.ac.uk/164081/1/WRAP-Monitoring-power-module-solder-degradation-heat-dissipation-two-opposite-directions-2022.pdf
Autor:
Thomas G. Coombs, Lin Zhou, Kieran Yardley, Prabodh Bajpai, Li Ran, Daniel J. Rogers, Timothy C. Green, Huaping Jiang, Debaprasad Kastha, Philip Mawby, Weihua Shao, Ruizhu Wu
Publikováno v:
IEEE Transactions on Power Electronics. 35:10567-10579
As grid codes evolve, inverter-interfaced renewable generation may be required to take greater responsibility for grid support. It may be obliged to source a large current during a short-circuit fault in the grid and provide large dynamic reactive po
Autor:
Sunday Nereus Agbo, Erfan Bashar, Ruizhu Wu, Simon Mendy, Jose Ortiz Gonzalez, Olayiwola Alatise
Using experimental measurements and finite element simulations, this paper investigates the failure mode of SiC Cascode JFETs under short circuit (SC) conditions. Unlike SiC MOSFETs, where failure results in a shorted gate-source terminal (resulting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a97b8a54470106a7ba85adf03a88d1d2
http://wrap.warwick.ac.uk/161786/1/WRAP-Simulations-measurements-failure-modes-SiC-cascodes-JFETs-conditions-2021.pdf
http://wrap.warwick.ac.uk/161786/1/WRAP-Simulations-measurements-failure-modes-SiC-cascodes-JFETs-conditions-2021.pdf
Autor:
Olayiwola Alatise, Jose Ortiz Gonzalez, Saeed Jahdi, Ruizhu Wu, Juefei Yang, Bernard H. Stark
Publikováno v:
Yang, J, Jahdi, S, Stark, B, Wu, R, Alatise, O & Gonzalez, J O 2021, Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET . in IECON 2021-47th Annual Conference of the IEEE Industrial Electronics Society . IECON Proceedings (Industrial Electronics Conference), vol. 2021-October, IEEE Computer Society, 978-1-6654-0256-9, 47th Annual Conference of the IEEE Industrial Electronics Society, IECON 2021, Toronto, Canada, 13/10/21 . https://doi.org/10.1109/IECON48115.2021.9589773
IECON
IECON
In this paper, the properties of crosstalk on SiC planar MOSFET, SiC symmetrical double-trench MOSFET and SiC asymmetrical double-trench MOSFET is investigated on a half-bridge topology, to enable analysis of the impact of temperature, drain-source t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d50074941dfa94267c25691a062e93f5
https://research-information.bris.ac.uk/ws/files/307721011/conference_101719.pdf
https://research-information.bris.ac.uk/ws/files/307721011/conference_101719.pdf
Autor:
Ruizhu Wu, Phil Mawby, Olayiwola Alatise, Jose Ortiz Gonzalez, Jesus Doval-Gandoy, Diego Perez-Estevez
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
Direct current controllers have been widely used in grid-tied applications and electric drives. Direct controllers select the switching states of the converter without the intervention of a modulation stage. In comparison with PWM based controllers,