Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ruize Feng"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:2262-2267
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d829e46df9ff9f8219856d0340052d
https://doi.org/10.1109/ted.2023.3262487
https://doi.org/10.1109/ted.2023.3262487
Autor:
Yanzhe Wang, Jianjun Ding, Ruize Feng, Shurui Cao, Fugui Zhou, Wuchang Ding, Yongbo Su, Zhi Jin
Publikováno v:
IEEE Transactions on Electron Devices. 70:941-946
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b537cc2c2dc64dacd963649ec95d278
https://doi.org/10.1109/ted.2023.3237996
https://doi.org/10.1109/ted.2023.3237996
Publikováno v:
IEEE Transactions on Electron Devices. 70:934-940
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f12dd6470a76c7231c6133406537f3
https://doi.org/10.1109/ted.2023.3235709
https://doi.org/10.1109/ted.2023.3235709
Autor:
Bo Wang, Yanfu Wang, Ruize Feng, Haomiao Wei, Shurui Cao, Tong Liu, Xiaoyu Liu, Haiou Li, Peng Ding, Zhi Jin
Publikováno v:
Electronics, Vol 11, Iss 259, p 259 (2022)
Electronics; Volume 11; Issue 2; Pages: 259
Electronics; Volume 11; Issue 2; Pages: 259
In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e5025b9b08d5091899f759e42487419
https://www.mdpi.com/2079-9292/11/2/259
https://www.mdpi.com/2079-9292/11/2/259
Autor:
Bo, WANG, Peng, DING, Ruize, FENG, Yanfu, WANG, Xiaoyu, LIU, Tangyou, SUN, Yonghe, CHEN, Xingpeng, LIU, Qi, LI, Yue, LI, Yingbo, LIU, Yihui, YIN, Hao, ZHAO, Wei, ZHANG, Haiou, LI, Zhi, JIN
Publikováno v:
Chinese Journal of Electronics; November 2021, Vol. 30 Issue: 6 p1017-1021, 5p