Zobrazeno 1 - 10
of 2 451
pro vyhledávání: '"Ruiz, A. G."'
Autor:
Pasadas, Francisco, Medina-Rull, Alberto, Ruiz, Francisco G., Ramos-Silva, Javier Noe, Pacheco-Sanchez, Anibal, Pardo, Mari Carmen, Toral-Lopez, Alejandro, Godoy, Andrés, Ramírez-García, Eloy, Jiménez, David, Marin, Enrique G.
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of
Externí odkaz:
http://arxiv.org/abs/2309.08519
Autor:
Cuesta-Lopez, J., Ganeriwala, M. D., Marin, E. G., Toral-Lopez, A., Pasadas, F., Ruiz, F. G., Godoy, A.
Publikováno v:
Journal of Applied Physics; 9/28/2024, Vol. 136 Issue 12, p1-9, 9p
Publikováno v:
In Journal of Hand and Microsurgery October 2024 16(4)
Autor:
Hiya, Farhan, Lamour, Jean-Paul M., Khan, Anwar A., Wood, Robert, Rodriguez de la Vega, Pura E., Castro, Grettel, Ruiz, Juan G., Barengo, Noel C.
Publikováno v:
Journal of Physical Activity & Health; Jun2024, Vol. 21 Issue 6, p578-585, 8p
Autor:
Grour, Tarek El, Pasadas, Francisco, Medina-Rull, Alberto, Najari, Montassar, Marin, Enrique G., Toral-Lopez, Alejandro, Ruiz, Francisco G., Godoy, Andrés, Jiménez, David, El-Mir, Lassaad
Publikováno v:
IEEE Transactions on Electron Devices, 68(11), 5916-5919, 2021
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson equation in
Externí odkaz:
http://arxiv.org/abs/2109.06585
Publikováno v:
In The Journal of nutrition, health and aging August 2024 28(8)
Autor:
Pasadas, Francisco, Medina-Rull, Alberto, Feijoo, Pedro Carlos, Pacheco-Sanchez, Anibal, Marin, Enrique G., Ruiz, Francisco G., Rodriguez, Noel, Godoy, Andrés, Jiménez, David
Publikováno v:
Nano Express, vol. 2(3), 036001, 2021
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is crucial f
Externí odkaz:
http://arxiv.org/abs/2105.06698
Publikováno v:
ACS Nano 2021, 15, 8, 13155-13165
The performance of gold nanoparticles (NPs) in applications depends critically on the structure of the NP-solvent interface, at which the electrostatic surface polarization is one of the key characteristics that affects hydration, ionic adsorption, a
Externí odkaz:
http://arxiv.org/abs/2104.06250
Autor:
Toral-Lopez, A., Pasadas, F., Marin, E. G., Medina-Rull, A., Gonzalez-Medina, J. M., Ruiz, F. G., Jiménez, D., Godoy, A.
Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experime
Externí odkaz:
http://arxiv.org/abs/2103.08519
Autor:
Medina-Rull, A., Pasadas, F., Marin, E. G., Toral-Lopez, A., Cuesta, J., Godoy, A., Jiménez, D., Ruiz, F. G.
Publikováno v:
IEEE Access, 2020, vol. 8, p. 209055-209063
We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier configuration. The pha
Externí odkaz:
http://arxiv.org/abs/2103.06378