Hypoxia Tumor Microenvironment Activates GLI2 through HIF-1α and TGF-β2 to Promote Chemotherapy Resistance of Colorectal Cancer

Autor: Kun Huang, Xin Zhang, Yanhui Hao, Ruixing Feng, Haojie Wang, Zhiwan Shu, An Li, Minghu Du

Publikováno v: Computational and Mathematical Methods in Medicine.

Background. A majority of relapse cases have been reported in colorectal cancer patients due to cancer stem cell progenitors. The factors responsible for chemoresistance have yet to be discovered and investigated as CSCs have reported escaping from c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e0a23912664ddb0064e01d5c7064d65

Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

Autor: Scott Medling, Salvy P. Russo, D. J. Sprouster, John Lundsgaard Hansen, C J Glover, Felipe Kremer, Arne Nylandsted-Larsen, Mark C Ridgway, Sahar Mirzaei, Ruixing Feng, Stefan Decoster

Publikováno v: Feng, R, Kremer, F, Sprouster, D J, Mirzaei, S, Decoster, S, Glover, C J, Medling, S A, Hansen, J L, Nylandsted-Larsen, A, Russo, S P & Ridgway, M C 2017, ' Enhanced Electrical Activation in In-Implanted Si 0.35 Ge 0.65 by C Co-Doping ', Materials Research Letters, vol. 5, no. 1, pp. 29-34 . https://doi.org/10.1080/21663831.2016.1169229
Materials Research Letters, Vol 5, Iss 1, Pp 29-34 (2017)

In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray abso

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a26e9dcef1d608bc109977c1c2d3f83
https://doi.org/10.1080/21663831.2016.1169229

Electrical and structural properties of In-implanted Si1-xGex alloys

Autor: Mark C Ridgway, Scott Medling, Felipe Kremer, Arne Nylandsted-Larsen, Stefan Decoster, D. J. Sprouster, Sahar Mirzaei, John Lundsgaard Hansen, C J Glover, Ruixing Feng, Salvy P. Russo

Publikováno v: Feng, R, Kremer, F, Sprouster, D J, Mirzaei, S, Decoster, S, Glover, C J, Medling, S A, Hansen, J L, Nylandsted-Larsen, A, Russo, S P & Ridgway, M C 2016, ' Electrical and structural properties of In-implanted Si1-xGex alloys ', Journal of Applied Physics, vol. 119, no. 2, 025709 . https://doi.org/10.1063/1.4940046

We report on the effects of dopant concentration and substrate stoichiometry on the electrical and structural properties of In-implanted Si1−xGex alloys. Correlating the fraction of electrically active In atoms from Hall Effect measurements with th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e184801e85587879655ea45a35f7d368
https://pure.au.dk/portal/da/publications/electrical-and-structural-properties-of-inimplanted-si1xgex-alloys(aff92617-205a-45f8-a038-fc69e0da85e3).html

Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4

Autor: C J Glover, Felipe Kremer, D. J. Sprouster, Ruixing Feng, Sahar Mirzaei

Publikováno v: Journal of Applied Physics. 121:105702

SiGe nanoparticles were formed in an amorphous Si3N4 matrix by Ge+ ion implantation and thermal annealing. The size of the nanoparticles was determined by transmission electron microscopy and their atomic structure by x-ray absorption spectroscopy. N

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b6bd948eb06b990b1146d465564d1502
https://doi.org/10.1063/1.4977507

Enhanced electrical activation in In-implanted Ge by C co-doping

Autor: Sahar Mirzaei, Ruixing Feng, Stefan Decoster, Scott Medling, C J Glover, L. M. C. Pereira, Felipe Kremer, D. J. Sprouster, Mark C Ridgway, Salvy P. Russo

Publikováno v: Applied Physics Letters. 107:212101

At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant inc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba1cd9e6420c06185056036d17e16f59
https://doi.org/10.1063/1.4936331