Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Ruiqing Cheng"'
LncRNA XIST facilitates the odontogenic differentiation of dental pulp stem cells via the FUS/ZBTB16
Publikováno v:
Journal of Applied Oral Science, Vol 32 (2024)
Abstract Objective This study aims to explore the regulatory mechanism of long noncoding RNA X inactive specific transcript (lncRNA XIST) in the odontogenic differentiation of human dental pulp stem cells (hDPSCs). hDPSCs were obtained from freshly e
Externí odkaz:
https://doaj.org/article/703eafba56a44b7095b820bb960ed1e1
Autor:
Zijia Liu, Xunguo Gong, Jinran Cheng, Lei Shao, Chunshui Wang, Jian Jiang, Ruiqing Cheng, Jun He
Publikováno v:
Chip, Vol 3, Iss 1, Pp 100080- (2024)
Two-dimensional (2D) van der Waals materials have attracted great interest and facilitated the development of post-Moore electronics owing to their novel physical properties and high compatibility with traditional microfabrication techniques. Their w
Externí odkaz:
https://doaj.org/article/b03acc9f58834f2487522975ab3243fe
Autor:
Ruiqing Cheng, Lei Yin, Yao Wen, Baoxing Zhai, Yuzheng Guo, Zhaofu Zhang, Weitu Liao, Wenqi Xiong, Hao Wang, Shengjun Yuan, Jian Jiang, Chuansheng Liu, Jun He
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Van der Waals crystals allow for magnetism down to the monolayer limit, however, this magnetism, and frequently the material itself, is fragile. Ferrites, conversely, have robust material stability and magnetic order, but are three dimensional. Here
Externí odkaz:
https://doaj.org/article/541aaaba03c143ec86d60aa94762962a
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Utilization of inevitable defect states in 2D materials can enable efficient photodetection and memory applications. Here, the authors report use of defect-induced deep traps to capture and store carriers in exfoliated flakes of MoS2xSe2(1-x) as phot
Externí odkaz:
https://doaj.org/article/02705021ecec4a0f921a7924000cf060
Autor:
Junjun Wang, Feng Wang, Zhenxing Wang, Ruiqing Cheng, Lei Yin, Yao Wen, Yu Zhang, Ningning Li, Xueying Zhan, Xiangheng Xiao, Liping Feng, Jun He
Publikováno v:
Advanced Science, Vol 6, Iss 11, Pp n/a-n/a (2019)
Abstract Barriers that charge carriers experience while injecting into channels play a crucial role on determining the device properties of van der Waals semiconductors (vdWS). Among various strategies to control these barriers, inserting a graphene
Externí odkaz:
https://doaj.org/article/c8af5f31bcde465992be67e9af6f36b7
Publikováno v:
Frontiers of Physics. 18
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating electronic energy band structures, rich valley physical properties and strong spin–orbit coupling have attracted tremendous interest, and show great potential in electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52f4c9de52a9300a92775a2ad397ea89
https://doi.org/10.1007/s11467-023-1286-2
https://doi.org/10.1007/s11467-023-1286-2
Autor:
Baoxing Zhai, Ruiqing Cheng, Tianxing Wang, Li Liu, Lei Yin, Yao Wen, Hao Wang, Sheng Chang, Jun He
Publikováno v:
Physical Review Applied. 19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2958ad91e551a3acddbe996134b2a4
https://doi.org/10.1103/physrevapplied.19.054045
https://doi.org/10.1103/physrevapplied.19.054045
Autor:
Tao Yan, Yuchen Cai, Yanrong Wang, Jia Yang, Shuhui Li, Xueying Zhan, Fengmei Wang, Ruiqing Cheng, Feng Wang, Jun He, Zhenxing Wang
Publikováno v:
Science China Information Sciences. 66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a55b3037dae09392740a6f7772b4873f
https://doi.org/10.1007/s11432-022-3695-1
https://doi.org/10.1007/s11432-022-3695-1
Publikováno v:
Science Bulletin.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9912469af47214f53018549af2b233b4
https://doi.org/10.1016/j.scib.2023.05.003
https://doi.org/10.1016/j.scib.2023.05.003
Autor:
Jian Jiang, Wenyong Feng, Yao Wen, Lei Yin, Hao Wang, Xiaoqiang Feng, Yan‐li Pei, Ruiqing Cheng, Jun He
Publikováno v:
Advanced Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19a39ea6128dd122a898eabec86663ec
https://doi.org/10.1002/adma.202301668
https://doi.org/10.1002/adma.202301668