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pro vyhledávání: '"Ruimei Yin"'
Autor:
Wei Jia, Zhiwei Du, Lifan Zhang, Ruimei Yin, Hailiang Dong, Tianbao Li, Zhigang Jia, Bingshe Xu
Publikováno v:
AIP Advances, Vol 14, Iss 5, Pp 055011-055011-8 (2024)
3D micro-nano devices are expected to become the mainstay of multi-color solid-state lighting in the future because of their broad-band characteristic and the advantage of integrating the monolithic light-emitting diode on a single chip. In this work
Externí odkaz:
https://doaj.org/article/ba8f926d0f324569911e37ba82d24fb4
Autor:
Ruimei Yin, Wei Jia, Hailiang Dong, Zhigang Jia, Tianbao Li, Chunyan Yu, Zhuxia Zhang, Bingshe Xu
Publikováno v:
AIP Advances, Vol 12, Iss 2, Pp 025308-025308-7 (2022)
Semi-polar 101̄1 green InGaN light-emitting diodes with different quantum barrier materials were numerically investigated by considering the In composition fluctuation model. For the green light-emitting diode using quaternary Al0.05In0.1Ga0.85N qua
Externí odkaz:
https://doaj.org/article/bee057263fce4f22a396eeeeb6777832