Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Ruiling Gong"'
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Akademický článek
Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation
Autor: Zhen Zheng, Junyang An, Ruiling Gong, Yuheng Zeng, Jichun Ye, Linwei Yu, Ileana Florea, Pere Roca i Cabarrocas, Wanghua Chen
Publikováno v: Nanomaterials, Vol 11, Iss 7, p 1803 (2021)
In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and subm
Externí odkaz: https://doaj.org/article/d2558ab8060b47bdbe715d5f83706b3f
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3
Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires’ Morphology in In Situ TEM
Autor: Ya Shen, Xuechun Zhao, Ruiling Gong, Eric Ngo, Jean-Luc Maurice, Pere Roca i Cabarrocas, Wanghua Chen
Publikováno v: Materials; Volume 15; Issue 15; Pages: 5244
We used in situ transmission electron microscopy (TEM) to observe the dynamic changes of Si nanowires under electron beam irradiation. We found evidence of structural evolutions under TEM observation due to a combination of electron beam and thermal
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21f6d8c8859c9dd043c231160ba60fe8
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4
Hydrogen Plasma-Assisted Growth of Gold Nanowires
Autor: Bozhi Tian, Sébastien Duguay, Wanghua Chen, Zhen Zheng, Junyang An, Edy Azrak, Antonino Foti, Simona Moldovan, Philippe Pareige, Chantal Karam, Vishnu Nair, Jean-Luc Maurice, Pere Roca i Cabarrocas, Ruiling Gong
Publikováno v: Crystal Growth & Design
Crystal Growth & Design, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
Crystal Growth and Design
Crystal Growth and Design, American Chemical Society, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
Crystal Growth & Design, American Chemical Society, 2020, 20 (6), pp.4185-4192. ⟨10.1021/acs.cgd.0c00480⟩
International audience; Because of their innocuity, Au nanowires present an interesting field of applications in biology and, particularly, in cancer therapy. Since their morphology and distribution can greatly affect their performances, being able t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e34b8e39f24e40583355571fd4a57bf
https://doi.org/10.1021/acs.cgd.0c00480
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5
Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation
Autor: Wanghua Chen, Zhen Zheng, Ileana Florea, Ruiling Gong, Pere Roca i Cabarrocas, Junyang An, Linwei Yu, Jichun Ye, Yuheng Zeng
Publikováno v: Nanomaterials
Nanomaterials, MDPI, 2021, 11 (7), pp.1803. ⟨10.3390/nano11071803⟩
Nanomaterials, Vol 11, Iss 1803, p 1803 (2021)
Volume 11
Issue 7
In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and subm
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::573973c2fb793e0fcfcd1d3b348450e0
https://hal.archives-ouvertes.fr/hal-03447656
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6
Controlling solid–liquid–solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO 2 nanoparticles
Autor: Pere Roca i Cabarrocas, Edy Azrak, Wanghua Chen, Celia Castro, Ruiling Gong, Philippe Pareige, Sébastien Duguay
Publikováno v: Nanotechnology
Nanotechnology, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩
Nanotechnology, Institute of Physics, 2021, 32 (34), pp.345602. ⟨10.1088/1361-6528/abfc72⟩
Alloying Ge with Sn is one of the promising ways for achieving Si compatible optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a hydrogenated amorphous Ge (a-Ge:H) layer with the help of metal Sn droplets. The full
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64213c6d8ea9e416df26819450ee53b9
https://hal.science/hal-03249563
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7
Controlling solid-liquid-solid GeSn nanowire growth modes by changing deposition sequences of a-Ge:H layer and SnO
Autor: Ruiling, Gong, Edy, Azrak, Celia, Castro, Sébastien, Duguay, Philippe, Pareige, Pere, Roca I Cabarrocas, Wanghua, Chen
Publikováno v: Nanotechnology. 32(34)
Alloying Ge with Sn is one of the promising ways for achieving Si compatible optoelectronics. Here, GeSn nanowires (NWs) are realized via nano-crystallization of a hydrogenated amorphous Ge (a-Ge:H) layer with the help of metal Sn droplets. The full
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::02de8e32c22c66f98d3bd69422a63520
https://pubmed.ncbi.nlm.nih.gov/33910185
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9
Interfacial hydrogen incorporation in epitaxial silicon for layer transfer
Autor: Junyang An, Haeyeon Jun, Zhen Zheng, Wanghua Chen, Thi Bao Tran Nguyen, Ruiling Gong, Marta Chrostowki, Jean-Luc Maurice, Pere Roca i Cabarrocas
Publikováno v: Applied Surface Science
Applied Surface Science, Elsevier, 2020, 518, pp.146057. ⟨10.1016/j.apsusc.2020.146057⟩
International audience; Recently, epitaxial Si layers have attracted strong attention, particularly in photovoltaics. This successful application depends mainly on the easiness of their transfer to a foreign carrier substrate. Therefore, developing a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::567d8915541cbe58559a4ea04a8ae21f
https://doi.org/10.1016/j.apsusc.2020.146057
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