Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Ruihuan Duan"'
Autor:
Song Zhu, Ruihuan Duan, Xiaodong Xu, Fangyuan Sun, Wenduo Chen, Fakun Wang, Siyuan Li, Ming Ye, Xin Zhou, Jinluo Cheng, Yao Wu, Houkun Liang, Junichiro Kono, Xingji Li, Zheng Liu, Qi Jie Wang
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-10 (2024)
Abstract Nonlinear optical activities, especially second harmonic generation (SHG), are key phenomena in inversion-symmetry-broken two-dimensional (2D) transition metal dichalcogenides (TMDCs). On the other hand, anisotropic nonlinear optical process
Externí odkaz:
https://doaj.org/article/d11275e7acc54ace9c0bead5b740a707
Autor:
Haiyang Pan, Anil Kumar Singh, Chusheng Zhang, Xueqi Hu, Jiayu Shi, Liheng An, Naizhou Wang, Ruihuan Duan, Zheng Liu, Stuart S. P. Parkin, Pritam Deb, Weibo Gao
Publikováno v:
InfoMat, Vol 6, Iss 6, Pp n/a-n/a (2024)
Abstract The exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean
Externí odkaz:
https://doaj.org/article/a855274e373f4556a49019d36ff3e788
Autor:
Song Zhu, Ruihuan Duan, Xiaodong Xu, Fangyuan Sun, Wenduo Chen, Fakun Wang, Siyuan Li, Ming Ye, Xin Zhou, Jinluo Cheng, Yao Wu, Houkun Liang, Junichiro Kono, Xingji Li, Zheng Liu, Qi Jie Wang
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/e9e757ccfdc44c32bb582115044c5952
Autor:
Fakun Wang, Fangchen Hu, Mingjin Dai, Song Zhu, Fangyuan Sun, Ruihuan Duan, Chongwu Wang, Jiayue Han, Wenjie Deng, Wenduo Chen, Ming Ye, Song Han, Bo Qiang, Yuhao Jin, Yunda Chua, Nan Chi, Shaohua Yu, Donguk Nam, Sang Hoon Chae, Zheng Liu, Qi Jie Wang
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Infrared machine vision system for object perception and recognition is becoming increasingly important in the Internet of Things era. However, the current system suffers from bulkiness and inefficiency as compared to the human retina with t
Externí odkaz:
https://doaj.org/article/f7db816fe4844e86b79007ea44cbf04c
Autor:
Tianjiao Zhang, Jialei Miao, Chun Huang, Zheng Bian, Maoxin Tian, Haohan Chen, Ruihuan Duan, Lin Wang, Zheng Liu, Jingsi Qiao, Yang Xu, Bin Yu, Yuda Zhao
Publikováno v:
Materials & Design, Vol 231, Iss , Pp 112035- (2023)
Metal-semiconductor field-effect transistors (MESFETs) offer the advantages of efficient gate control and low power consumption due to the large junction capacitance. However, the strong Fermi-level pinning caused by the metal-induced gap states make
Externí odkaz:
https://doaj.org/article/9ac5a94532a04e54bb67c540035ef622
Autor:
Fakun Wang, Fangchen Hu, Mingjin Dai, Song Zhu, Fangyuan Sun, Ruihuan Duan, Chongwu Wang, Jiayue Han, Wenjie Deng, Wenduo Chen, Ming Ye, Song Han, Bo Qiang, Yuhao Jin, Yunda Chua, Nan Chi, Shaohua Yu, Donguk Nam, Sang Hoon Chae, Zheng Liu, Qi Jie Wang
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-1 (2023)
Externí odkaz:
https://doaj.org/article/9c34cdfc69084ebe82fd724bcf74fc6e
Autor:
Li Ma, Liu Yang, Yuqiang Fang, Manzhang Xu, Ruihuan Duan, Vanessa Li Zhang, Xuewen Wang, Fuqiang Huang, Menghao Wu, Zheng Liu, Ting Yu
Publikováno v:
SmartMat, Vol 4, Iss 2, Pp n/a-n/a (2023)
Abstract Two‐dimensional (2D) ferroelectrics have attracted considerable attention due to their potential in the development of devices of miniaturization and multifunction. Although several van der Waals (vdW)‐layered materials show ferroelectri
Externí odkaz:
https://doaj.org/article/617a5251339b42f9aa93878cf40bd6f4
Akademický článek
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Publikováno v:
Advanced Science, Vol 9, Iss 16, Pp n/a-n/a (2022)
Abstract Van der Waals (vdW) materials have attracted much interest for their myriad unique electronic, mechanical, and thermal properties. In particular, they are promising candidates for monochromatic, table‐top X‐ray sources. This work reveals
Externí odkaz:
https://doaj.org/article/22b92fa6470a4843a92adf7dc010ca5f
Autor:
Xiaowei Wang, Chao Zhu, Ya Deng, Ruihuan Duan, Jieqiong Chen, Qingsheng Zeng, Jiadong Zhou, Qundong Fu, Lu You, Song Liu, James H. Edgar, Peng Yu, Zheng Liu
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
The memory retention for a ferroelectric field-effect transistor is limited by the depolarization effects and carrier charge trapping. Here, the authors fabricate a long-retention memory cell with a metal-ferroelectric-metal-insulator-semiconductor a
Externí odkaz:
https://doaj.org/article/9ad4d3622c3f4336850233ae14c3daa3