Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Ruifeng Yue"'
Publikováno v:
Mathematics, Vol 12, Iss 11, p 1773 (2024)
The discrete Legendre transform is a powerful tool for analyzing the properties of convex lattice sets. In this paper, for t>0, we study a class of convex lattice sets and establish a relationship between vertices of the polar of convex lattice sets
Externí odkaz:
https://doaj.org/article/185feab42ed34c8aac6789795a50dfd7
Publikováno v:
IEEE Transactions on Electron Devices. 70:4-12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4d722ed113260c18e22aaf2a437a331
https://doi.org/10.1109/ted.2022.3220481
https://doi.org/10.1109/ted.2022.3220481
Publikováno v:
IEEE Transactions on Electron Devices. 69:1258-1264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1971f67b02de22e7e79d66021f7934a3
https://doi.org/10.1109/ted.2022.3146214
https://doi.org/10.1109/ted.2022.3146214
Dielectric Constant Determination for Thin Film by Using Reflection Resonance Microstrip Line Method
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 29:15-21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e08dba3b46ce00755ddc0b6ad41cb8
https://doi.org/10.1109/tdei.2022.3146572
https://doi.org/10.1109/tdei.2022.3146572
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9270ec8c157f4b4be32dd433b043349e
https://doi.org/10.1109/icsict55466.2022.9963433
https://doi.org/10.1109/icsict55466.2022.9963433
Publikováno v:
Journal of Lightwave Technology. 39:2421-2430
The D-band (110∼170 GHz) thin film microstrip line (TFML) with easy integration, low loss, and easy fabrication is presented in this work. It is composed of copper (Cu) signal line on the top layer, ultra-thin Benzocyclobutene (BCB) dielectric on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24911fd07af5797497cfbbbe2b6ebcad
https://doi.org/10.1109/jlt.2021.3052560
https://doi.org/10.1109/jlt.2021.3052560
Publikováno v:
IEEE Transactions on Electron Devices. 67:3685-3690
In this article, a novel SiC trench MOSFET with deep $\text{p}^{+}$ shielded regions and current spreading layers (CSLs) (DPCSL-MOS) is proposed and studied by TCAD simulations. The results show that the introduction of the deep $\text{p}^{+}$ shield
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d42eb6301efa684ebca272383cfef0
https://doi.org/10.1109/ted.2020.3005992
https://doi.org/10.1109/ted.2020.3005992
Publikováno v:
2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b88b0362838bdc880b30e60625049143
https://doi.org/10.1109/icta53157.2021.9661636
https://doi.org/10.1109/icta53157.2021.9661636