Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Ruifei Duan"'
Autor:
Jiankun Yang, Yaqi Gao, Wei Zheng, Rui He, Ziqiang Huo, Xiaoli Ji, Junxue Ran, Ruifei Duan, Junxi Wang, Jinmin Li, Tongbo Wei
Publikováno v:
Crystal Growth & Design. 22:1731-1737
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec31d1a7fce238419d27a323c416aea1
https://doi.org/10.1021/acs.cgd.1c01320
https://doi.org/10.1021/acs.cgd.1c01320
Autor:
Tongbo Wei, Lian Zhang, Xiaoli Ji, Junxi Wang, Ziqiang Huo, Baojun Sun, Qiang Hu, Xuecheng Wei, Ruifei Duan, Lixia Zhao, Yiping Zeng, Jinmin Li
Publikováno v:
IEEE Photonics Journal, Vol 6, Iss 6, Pp 1-10 (2014)
In this work, efficiency droop of InGaN/GaN multiple-quantum-well LEDs with super wide well (WW) is discussed by comparing the external quantum efficiency (EQE) of GaN grown on sapphire and FS-GaN substrates. The luminescence and electrical character
Externí odkaz:
https://doaj.org/article/506bf6fa596c4dcba0a10c7ebe0c8c07
Autor:
Yun Zhao, Gang Wang, Junxi Wang, Tongbo Wei, Xiaokun Fan, Lianfeng Sun, Ya Deng, Ruifei Duan, Jian Zhang, Wenbin Huang
Publikováno v:
RSC Advances. 6:1999-2003
In this work, graphene grown by chemical vapour deposition is transferred onto a micron-scale hole array (MSHA) substrate by a polymer-free transfer process. The graphene adheres to the walls of the microholes and complies with the morphologies of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e2918ff707b36a3158850865cb2551
https://doi.org/10.1039/c5ra13916c
https://doi.org/10.1039/c5ra13916c
Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy
Autor:
Ruifei Duan, Hongliang Chang, Junxi Wang, Dongdong Liang, Jiankun Yang, Yun Zhao, Lianfeng Sun, Jie Su, Tongbo Wei
Publikováno v:
Applied Surface Science. 526:146747
The freestanding GaN substrate has a great potential to homo-epitaxy of optoelectronic and electronic devices with high reliability and performances. Here, we realized the growth of freestanding bulk GaN on dual-stack multilayer graphene as an insert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d349f17ac358399b74fdbf2816ce96
https://doi.org/10.1016/j.apsusc.2020.146747
https://doi.org/10.1016/j.apsusc.2020.146747
Autor:
An Pingbo, Junxi Wang, Ruifei Duan, Shuo Zhang, Lixia Zhao, Hongxi Lu, Lei Liu, Xuecheng Wei, Jinmin Li
Publikováno v:
physica status solidi c. 13:200-204
In this study, gallium nitride (GaN) films were grown on the quartz glass substrates using metal organic chemical vapor deposition with AlN buffer layer. The AlN layer was deposited using rf-magnetron sputtering. Although the direct nucleation of GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d05ad2a69e6ee7c57be99e59d26035
https://doi.org/10.1002/pssc.201510207
https://doi.org/10.1002/pssc.201510207
Publikováno v:
Materials Science in Semiconductor Processing. 29:357-361
We report a green light-emitting diode (LED) grown on thick strain-reduced GaN template. As the injection current changes from 20 mA to 120 mA, blue-shift of EL peak wavelength reduces from 9.3 nm for the LED on sapphire substrate to 6.8 nm for the L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::642606cb2de406a3e99a03e93b31edb8
https://doi.org/10.1016/j.mssp.2014.06.057
https://doi.org/10.1016/j.mssp.2014.06.057
Autor:
Xiaohui Qiu, Fengqi Gao, Xiaokun Fan, Lianfeng Sun, Guanglong Wang, Yun Zhao, Ruifei Duan, Jian Zhang, Ya Deng, Gang Wang, Xiaowei Wang, Zhongtao Qiao, Wenbin Huang
Publikováno v:
RSC Advances. 5:34065-34069
A voltage is induced when grapheme nanodrums (a graphene membrane on a nanopore array in a silicon oxide substrate) upheave/sink. The magnitude of the induced voltage is closely related to the extent to which the graphene membrane is bent, while its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fd54664b70a01a73ca965caea8022f9
https://doi.org/10.1039/c5ra00174a
https://doi.org/10.1039/c5ra00174a
Autor:
Yun Zhao, Wenbin Huang, Ya Deng, Gang Wang, Xiaokun Fan, Jian Zhang, Lianfeng Sun, Ruifei Duan
Publikováno v:
The Journal of Physical Chemistry C. 119:426-430
In this work, we report a systematic study of CVD synthesizing graphene on different crystal faces of sapphire (c-Plane, m-Plane, and r-Plane). Nickel films are deposited on sapphire substrates with c-Plane, m-Plane, and r-Plane to catalyzing the gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a82362a54bd9fe6bad05bb628e7fb0e
https://doi.org/10.1021/jp5101297
https://doi.org/10.1021/jp5101297
Publikováno v:
Journal of Crystal Growth. 387:101-105
Semipolar {1013} GaN layers were grown on self-assembled SiO 2 nanospheres sapphire (SSNS) by hydride vapor phase epitaxy. The RMS roughness was 1.1 nm for the scan of 20×20 µm 2 and the striated surface morphology almost disappeared. The full widt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9184c589ee9331228cada51521169e7
https://doi.org/10.1016/j.jcrysgro.2013.11.003
https://doi.org/10.1016/j.jcrysgro.2013.11.003
Autor:
Xiaoyan Yi, Xuecheng Wei, Yiping Zeng, Xiaoli Ji, Jun Ma, Ruifei Duan, Fuhua Yang, Junxi Wang, Jinmin Li, Guohong Wang
Publikováno v:
physica status solidi c. 11:718-721
This paper is focused on the temperature-dependence of photoluminescence (PL) internal quantum efficiency (IQE) and defect-recombination in InGaN light-emitting diodes. It is found low-temperature PL-IQE is remarkably lower than 100% for some samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069964601225272d89ba7e2dd08383a4
https://doi.org/10.1002/pssc.201300479
https://doi.org/10.1002/pssc.201300479