Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Rui-Xia Miao"'
Publikováno v:
Journal of Advanced Ceramics. 10:704-713
Tantalum pentoxide (Ta2O5) has attracted intensive attention due to their excellent physicochemical properties. Ta2O5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2ea0c18c368e73e7c91c336b883fc02
https://doi.org/10.1007/s40145-021-0465-2
https://doi.org/10.1007/s40145-021-0465-2
Publikováno v:
Journal of Solid State Chemistry. 310:123000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a2eabc60f540ca52292ccd1f3b68cf
https://doi.org/10.1016/j.jssc.2022.123000
https://doi.org/10.1016/j.jssc.2022.123000
Publikováno v:
Chinese Physics B. 30:098101
A hydrogen-plasma-etching-based plasma-enhanced chemical vapor deposition (PECVD) synthesis route without metal catalyst for preparing the graphene films on flexible glass is developed. The quality of the prepared graphene films is evaluated by scann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::172dde57602053a6dd0d6815d1c52a05
https://doi.org/10.1088/1674-1056/abeeec
https://doi.org/10.1088/1674-1056/abeeec
Publikováno v:
Chinese Physics B. 29:126301
The prospect of α-Ga2O3 in optical and electrical devices application is fascinating. In order to obtain better performance, Ge and F elements with similar electronegativity and atomic size are selected as dopants. Based on density functional theory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cdbaa76c967fa71942a05ff09440acb
https://doi.org/10.1088/1674-1056/abbbff
https://doi.org/10.1088/1674-1056/abbbff
Publikováno v:
Applied Physics Express. 12:045506
Band alignments between atomic layer deposition (ALD) HfO2/Al2O3 double layers and InAlAs were investigated by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The relationship of As and Hf 4f peaks reducing with the decreasing take-off angl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c8b6aa5e99dfc9b85dd4a3e1aeca3fa
https://doi.org/10.7567/1882-0786/ab07f7
https://doi.org/10.7567/1882-0786/ab07f7
Publikováno v:
physica status solidi (a). 215:1800477
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f75d17bc5188176b2895c35f47644026
https://doi.org/10.1002/pssa.201800477
https://doi.org/10.1002/pssa.201800477
Publikováno v:
Guang pu xue yu guang pu fen xi = Guang pu. 34(1)
In the present paper, Raman scattering techniques for N-type 4H-SiC single crystal material were performed at the temperatures ranging from 30 to 300 K. These measurements revealed that the Raman phonon modes have a redshift and the linewidth gradual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9fb5824d53b9ef0ce2a2fdd3546818b4
https://pubmed.ncbi.nlm.nih.gov/24783543
https://pubmed.ncbi.nlm.nih.gov/24783543
Publikováno v:
Guang pu xue yu guang pu fen xi = Guang pu. 30(3)
As the general method of defect characterization is destructive, during the current research on the effect of defect on device, nondestructive defect characterization is important especially. The defects of 4H-SiC homoepitaxial layer had been observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::8d2e2f27447755213c9562d40557edd7
https://pubmed.ncbi.nlm.nih.gov/20496691
https://pubmed.ncbi.nlm.nih.gov/20496691
Publikováno v:
Applied Physics Express; Apr2019, Vol. 12 Issue 4, p1-1, 1p