Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Rui-Lin Chao"'
Autor:
Zohauddin Ahmad, Yan-Min Liao, Sheng-I Kuo, You-Chia Chang, Rui-Lin Chao, Naseem, Yi-Shan Lee, Yung-Jr Hung, Huang-Ming Chen, Jyehong Chen, Jiun-In Guo, Jin-Wei Shi
Publikováno v:
IEEE Access, Vol 9, Pp 85661-85671 (2021)
In this work, we demonstrate the high-power and high-responsivity performance of the dual multiplication (M-) layers in In0.52Al0.48As based avalanche photodiode (APD). The dual M-layer design in our APD structure effectively constrains the multiplic
Externí odkaz:
https://doaj.org/article/a3020b191ee64b2ca284057f3d39c2de
Autor:
Naseem, Zohauddin Ahmad, Yan-Min Liao, Rui-Lin Chao, Po-Shun Wang, Yi-Shan Lee, Sean Yang, Sheng-Yun Wang, Hsiang-Szu Chang, Hung-Shiang Chen, Jack Jia-Sheng Huang, Emin Chou, Yu-Heng Jan, Jin-Wei Shi
Publikováno v:
Photonics, Vol 8, Iss 4, p 98 (2021)
In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type
Externí odkaz:
https://doaj.org/article/ba4f992a877141209d623481cb3d3b35
Autor:
Tin Komljenovic, Linjun Liang, Rui-Lin Chao, Jared Hulme, Sudharsanan Srinivasan, Michael Davenport, John E. Bowers
Publikováno v:
Applied Sciences, Vol 7, Iss 7, p 732 (2017)
Chip-scale widely-tunable lasers are important for both communication and sensing applications. They have a number of advantages, such as size, weight, and cost compared to mechanically tuned counterparts. Furthermore, they allow for integration in m
Externí odkaz:
https://doaj.org/article/81f0e664fd8c4264b150451a9ab2a19e
Autor:
Zohauddin Ahmad, Sheng-I Kuo, You-Chia Chang, Rui-Lin Chao, None Naseem, Yi-Shan Lee, Yung-Jr Hung, Huang-Ming Chen, Jason Chen, Chee Seong Goh, Jin-Wei Shi
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-9
In this work, we demonstrate a novel In0.52Al0.48As based top-illuminated avalanche photodiode (APD), designed to circumvent the problem of serious bandwidth degradation under high gain (>100) and high power operation and significantly enhance the dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16693abb5e781c6e8545ffcd106322a8
https://doi.org/10.1109/jstqe.2021.3062637
https://doi.org/10.1109/jstqe.2021.3062637
Publikováno v:
Journal of Lightwave Technology. 39:7740-7747
Novel microring based optical phase-shifters on Si-photonic platforms for microwave photonic applications are demonstrated. By using an add-drop microring structure in combination with an additional multimode interferometer (MMI), pure phase modulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a35a17d4ad7bdbf08ae5e244439b6919
https://doi.org/10.1109/jlt.2021.3098347
https://doi.org/10.1109/jlt.2021.3098347
Autor:
You-Chia Chang, Rui-Lin Chao, Naseem, H. S. Chen, Sheng-I Kuo, Jiun-In Guo, Yan-Min Liao, Yung-Jr Hung, Jyehong Chen, Zohauddin Ahmad, Yi-Shan Lee, Jin-Wei Shi
Publikováno v:
IEEE Access, Vol 9, Pp 85661-85671 (2021)
In this work, we demonstrate the high-power and high-responsivity performance of the dual multiplication (M-) layers in In0.52Al0.48As based avalanche photodiode (APD). The dual M-layer design in our APD structure effectively constrains the multiplic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0dff5d82f4785eceea9fd599838e5b49
https://ieeexplore.ieee.org/document/9453831/
https://ieeexplore.ieee.org/document/9453831/
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 26:1-7
We demonstrate a novel optical phase shifter with a bipolar junction transistor (BJT) type of device structure based on the silicon photonics foundry platform. By operating such a device in saturation mode, we obtain measured output IEC-VEC character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b675e7a1be6c6150ff8f6a2d61de1cab
https://doi.org/10.1109/jstqe.2019.2949451
https://doi.org/10.1109/jstqe.2019.2949451
Publikováno v:
IEEE Access, Vol 8, Pp 80836-80841 (2020)
A three-port optical phase-shifter and Mach-Zehnder modulator (MZM) based on PNP-type bipolar junction transistor (BJT) is demonstrated. Significant plasma (injected carrier) induced changes of the refractive index for the optical waveguide become po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::539fa0b49982aba652726d946967ed3e
https://doi.org/10.1109/access.2020.2990956
https://doi.org/10.1109/access.2020.2990956
Autor:
Rui-Lin Chao, Hao-Yi Zhao, Zohauddin Ahmad, Andrew H. Jones, Naseem, Jin-Wei Shi, Joe C. Campbell
Publikováno v:
Journal of Lightwave Technology. 37:5945-5952
In this work, we demonstrate a novel top-illuminated avalanche photodiode (APD) with high-speed and wide dynamic range performance for coherent lidar applications, which needs simultaneous processing of weak light reflections from the object and a st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7f84a44312da410b24849e690d9610
https://doi.org/10.1109/jlt.2019.2944098
https://doi.org/10.1109/jlt.2019.2944098
Autor:
Hung Shiang Chen, Emin Chou, Sheng Yun Wang, Yi Shan Lee, Naseem, Jack Jia Sheng Huang, Yu Heng Jan, Zohauddin Ahmad, Sean Yang, Po Shun Wang, Yan Min Liao, Hsiang Szu Chang, Rui Lin Chao, Jin-Wei Shi
Publikováno v:
Photonics, Vol 8, Iss 98, p 98 (2021)
Photonics
Volume 8
Issue 4
Photonics
Volume 8
Issue 4
In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::869737605f06a726712e3cc4de06c264
https://www.mdpi.com/2304-6732/8/4/98
https://www.mdpi.com/2304-6732/8/4/98