Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Rui Masuda"'
Publikováno v:
International Journal of Technology, Vol 2, Iss 1, Pp 74-83 (2014)
This paper proposes a study on the comparison of particle swarm optimization with genetic algorithm for molten pool detection in fixed aluminum pipe welding. The research was conducted for welding of aluminum alloy Al6063S-T6 with a controlled weld
Externí odkaz:
https://doaj.org/article/33d027a93cf744afa90bacefec9ce99a
Publikováno v:
Journal of Crystal Growth. 312:2324-2327
The surface morphology of homoepitaxial (0 0 0 1)ZnO thin layers grown by halide vapor phase epitaxy (HVPE) using ZnCl2 and H2O source gases was investigated. Atomic force microscopy (AFM) observations showed that high temperature growth at 1000 °C
Autor:
Naoki Yoshii, Tetsuhiro Tanabe, Akinori Koukitu, Shigetoshi Hosaka, Rui Masuda, Akira Kamisawa, Tetsuo Fujii, Yoshinao Kumagai
Publikováno v:
Journal of Crystal Growth. 311:1056-1059
The effects of growth conditions for ZnO layers grown by halide vapor phase epitaxy (HVPE) on (0 0 0 1) ZnO/sapphire templates are investigated. Micron-sized pyramidal ZnO islands nucleate on the template at the initial growth stage and each island g
Publikováno v:
QUARTERLY JOURNAL OF THE JAPAN WELDING SOCIETY. 27:17s-21s
This paper presents a study on a new method of welding penetration control for aluminum pipe in Tungsten Inert Gas (TIG) welding using omnidirectional vision-based monitoring of molten pool. As circumferential butt-welded pipes and the application of
Autor:
Akinori Koukitu, Akira Kamisawa, Shigetoshi Hosaka, Yoshinao Kumagai, Tetsuo Fujii, Naoki Yoshii, Rui Masuda
Publikováno v:
Materials Letters. 64:25-27
Using a halide vapor phase epitaxy (HVPE) technique in which the starting materials are ZnCl 2 generated by the reaction between high purity Zn metal (7 N grade) and Cl 2 gas, and H 2 O, ZnO crystals have been grown at a high temperature of 1000 °C
Publikováno v:
Japanese Journal of Applied Physics. 51:031103
The optical properties of (0001) ZnO layers grown at 1000 °C on (0001) sapphire substrates by halide vapor phase epitaxy (HVPE) were investigated by various photoluminescence (PL) measurements. A layer grown with a H2O/ZnCl2 (VI/II) ratio of 20 on a
Autor:
Akinori Koukitu, Hidemi Takasu, Rui Masuda, Yoshinao Kumagai, Shigetoshi Hosaka, Tetsuo Fujii, Naoki Yoshii
Publikováno v:
Applied Physics Express. 2:121102
High quality MgxZn1-xO layers (0≤x≤0.16) on Zn-polar ZnO substrates were successfully grown by halide vapor phase epitaxy (HVPE) at a high temperature of 1000 °C. The MgxZn1-xO layers exhibited atomically flat surfaces, and were free from impuri