Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Autor: Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R., Allsopp, D.W.E.

Publikováno v: In Sensors & Actuators: A. Physical 1 May 2013 194:247-251

Analytical and numerical modeling of AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments

Autor: Vittoz, S., Rufer, L., Rehder, G., Heinle, U., Benkart, P.

Publikováno v: In Procedia Engineering 2010 5:91-94

Surface acoustic wave excitation on SF 6 plasma-treated AlGaN/GaN heterostructure

Autor: Lalinský, T., Rýger, I., Rufer, L., Vanko, G., Haščík, Š., Mozolová, Ž., Tomáška, M., Vincze, A., Uherek, F.

Publikováno v: In Vacuum 2009 84(1):231-234

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Electrical Tuning of the Resonant Frequency of a Piezoelectric Micromachined Acoustic Transducer

Autor: Nastro, A., Ferrari, M., Ferrari, V., Rufer, L., Basrour, S.

Publikováno v: Associazione Italiana Sensori e Microsistemi (AISEM 2019)
Associazione Italiana Sensori e Microsistemi (AISEM 2019), Feb 2019, Naples (Napoli), Italy

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a530e59274705f09cc9ee9e7ed00cfd8
https://hal.archives-ouvertes.fr/hal-02613929