Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Ruey Dar Chang"'
Autor:
Bing Sheu, Shao-Ku Kao, Xiaoning Jiang, Chao-Sung Lai, Hui-Ying Yang, Vita Pi-Ho Hu, Hsiao-Chun Huang, Huan Liu, Ilgu Yun, Toshiya Sakata, Marco Ottavi, Panagiotis Dimitrakis, Georgios Ch. Sirakoulis, Mohan Rajesh Elara, Lin Lin, Yang Xu, Vito Puliafito, Attila Bonyar, Yuh-Shyan Hwang, Ruey-Dar Chang
Publikováno v:
IEEE Nanotechnology Magazine. 16:2-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aa9c818a951e3ce02e96f21d6087d4c
https://doi.org/10.1109/mnano.2022.3194994
https://doi.org/10.1109/mnano.2022.3194994
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 505:58-63
Understanding the behavior of dopant activation at low temperatures is necessary for three-dimensional integration of transistors. In this work, the impact of hydrogen coimplantation on boron activation was investigated at implantation doses below th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb77634bde5f8b7bf2a30a869a0dd6f2
https://doi.org/10.1016/j.nimb.2021.08.009
https://doi.org/10.1016/j.nimb.2021.08.009
Publikováno v:
AIP Advances, Vol 5, Iss 10, Pp 107128-107128-5 (2015)
We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were anneale
Externí odkaz:
https://doaj.org/article/db0132bf3be44b20af47630c943a33e0
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P262-P266
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9b225caf42117d2b59db72faf22b81
https://doi.org/10.1149/2.0041904jss
https://doi.org/10.1149/2.0041904jss
Publikováno v:
Vacuum. 140:161-164
Anomalous enhancement of phosphorus diffusion in pre-amorphized ultrashallow junctions was observed when the dose for carbon co-implantation was increased to 5 × 10 15 cm −2 at 5 keV. Simulation was performed to verify the diffusion mechanism and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a5f01be3d6b3be143641e8153673707
https://doi.org/10.1016/j.vacuum.2016.10.003
https://doi.org/10.1016/j.vacuum.2016.10.003
Autor:
Kai-Ping Chang, Li-Chun Chang, Jer-Chyi Wang, Ruey-Dar Chang, Chao-Sung Lai, Chin-Hsiang Liao
Publikováno v:
Current Applied Physics. 16:605-610
Characteristics of chemically-synthesized (CS) gold nanoparticle (Au-NP) nonvolatile memories (NVMs) with low-damage NH 3 plasma treatment on a tunneling oxide (TO) layer have been investigated. Although the dot density of CS Au-NPs is decreased, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58467e32ed3cc00d9fb4a3acde8a816d
https://doi.org/10.1016/j.cap.2016.03.009
https://doi.org/10.1016/j.cap.2016.03.009
Autor:
Chih-Hung Lin, Ruey-Dar Chang
Publikováno v:
Materials Science in Semiconductor Processing. 42:219-222
Phosphorus that had been implanted into silicon-on-insulator (SOI) substrates was activated using different annealing techniques to investigate phosphorus deactivation at low temperatures. A combination of amorphization and excimer laser annealing (E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::989dae98060e9e45e0e1ea4f9dbe63f3
https://doi.org/10.1016/j.mssp.2015.09.008
https://doi.org/10.1016/j.mssp.2015.09.008
Publikováno v:
Japanese Journal of Applied Physics. 59:096501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09744820462dfd369af94f9f6ad318af
https://doi.org/10.35848/1347-4065/aba9a6
https://doi.org/10.35848/1347-4065/aba9a6
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Silicon wafers were preamorphized to investigate the impact of carbon on the deactivation behaviors of boron and phosphorus. The boron deactivation caused by carbon was observed with solid phase epitaxial regrowth (SPER) at the beginning of rapid the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::625758a7f71a81858d9fa2b741a73919
https://doi.org/10.1109/iit.2018.8807894
https://doi.org/10.1109/iit.2018.8807894
Publikováno v:
Applied Surface Science. 356:1150-1154
Ultrashallow junctions were analyzed using secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) to investigate phosphorus redistribution at 500 °C after laser activation. Evident pileup near the surface region due to uph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f495c035cd5583de661fdb8000863cf
https://doi.org/10.1016/j.apsusc.2015.08.153
https://doi.org/10.1016/j.apsusc.2015.08.153