Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ruei-Lien Sun"'
Autor:
Ruei-Lien Sun, Hsin-Han Lai, Zih-Chun Su, Yao-Han Dong, Bo-Heng Chen, Deepali Sinha, Hong-Jhang Syu, Ching-Fuh Lin
Publikováno v:
Optics & Laser Technology. 166:109613
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fa86b1305f8133b49fb70270e2567e6
https://doi.org/10.1016/j.optlastec.2023.109613
https://doi.org/10.1016/j.optlastec.2023.109613
Publikováno v:
IEEE Transactions on Electron Devices. 69:205-211
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f72ea8082053ac345124a8be08e0e2f3
https://doi.org/10.1109/ted.2021.3130566
https://doi.org/10.1109/ted.2021.3130566
Publikováno v:
Infrared Sensors, Devices, and Applications XII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d038a33e9a73180577d34ea9dcc991
https://doi.org/10.1117/12.2633225
https://doi.org/10.1117/12.2633225
Publikováno v:
Infrared Sensors, Devices, and Applications XI.
Recent progress in plasmonic absorption devices provides a new way of photon-electron conversion through hot carrier emission if a carrier possesses sufficient energy to overcome the Schottky barrier. However, the behavior of carriers with energy low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b0c0dd56f3063bbf60e323da0e2a028
https://doi.org/10.1117/12.2593817
https://doi.org/10.1117/12.2593817
Publikováno v:
2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
Here, inverted-pyramid array structures (IPAS) are applied on NiSi/n-Si Schottky photodetectors to generate surface plasmon resonance and improve the photoresponse in mid-infrared region. Consequently, compared with the planar devices, the current re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09693d7ba54c13f9adaee4d3e39d9458
https://doi.org/10.1109/rapid51799.2021.9521452
https://doi.org/10.1109/rapid51799.2021.9521452
Publikováno v:
Infrared Technology and Applications XLVII.
Nowadays, infrared (IR) photodetectors are mainly made from compound semiconductors due to the bandgap flexibility. However, compound semiconductors are mostly synthesized by expensive and energy-intensive epitaxy processes. Moreover, compound semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1672f06e79557569d0d49dbd548dd5ed
https://doi.org/10.1117/12.2586050
https://doi.org/10.1117/12.2586050