Výsledky vyhledávání - "Ruei-Hong Cyu"

Akademický článek

Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays

Autor: Ying-Chun Shen, Bang-Kai Wu, Tsung-Shun Tsai, Mingjin Liu, Jyun-Hong Chen, Tzu-Yi Yang, Ruei-Hong Cyu, Chieh-Ting Chen, Yu-Chieh Hsu, Chai-Hung Luo, Yu-Qi Huang, Yu-Ren Peng, Chang-Hong Shen, Yen-Fu Lin, Po-Wen Chiu, Ya-Chin King, Yu-Lun Chueh

Publikováno v: Small Science, Vol 4, Iss 2, Pp n/a-n/a (2024)

A top‐down transfer process is developed via a rolling process associated with thermal release tape/poly(methyl methacrylate) (PMMA) bi‐supporting layers to realize large‐scale transfer processes on transition metal dichalcogenide materials. A

Externí odkaz: https://doaj.org/article/6b2b122fd0cc4bc890c37faa68f3a2b0

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Two-Dimensional (2D) Materials-Inserted Conductive Bridge Random Access Memory: Controllable Injection of Cations in Vertical Stacking Alignment of MoSe2 Layers Prepared by Plasma-Assisted Chemical Vapor Reaction

Autor: Ying-Chun Shen, Chung-Yu Chen, Ling Lee, Chun-Hsiu Chiang, Yu-Chieh Hsu, Ruei-Hong Cyu, Yu-Ren Peng, Yi-Jen Yu, Hao-chung Kuo, Tseung-Yuen Tseng, Yu-Lun Chueh

Publikováno v: ACS Materials Letters. 5:1401-1410

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7dfaa4500e3db0223a38a1f22f367659
https://doi.org/10.1021/acsmaterialslett.3c00013

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Rational Design on Polymorphous Phase Switching in Molybdenum Diselenide-Based Memristor Assisted by All-Solid-State Reversible Intercalation toward Neuromorphic Application

Autor: Ling Lee, Chun-Hsiu Chiang, Ying-Chun Shen, Shu-Chi Wu, Yu-Chuan Shih, Tzu-Yi Yang, Yu-Chieh Hsu, Ruei-Hong Cyu, Yi-Jen Yu, Shang-Hsien Hsieh, Chia-Hao Chen, Mikhail Lebedev, Yu-Lun Chueh

Publikováno v: ACS nano.

Synaptic devices based on non-volatile resistive random access memory (RRAM) have inspired increasing opportunities, including in-memory computing and neural engines, while typical filamentary-based RRAM is subjected to large switching current and ca

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1a5bc0fca761f018acd084646fbc95b
https://pubmed.ncbi.nlm.nih.gov/36575141

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Geometric Design of Confined Conducting Filaments in Resistive Random Access Memory by Al2O3 Nanodome-Shaped Arrays (NDSAs) via Glancing-Angle Deposition Technology Toward Neuromorphic Computing

Autor: Yu-Lun Chueh, Yu-Chuan Shih, Tzu-Yi Yang, Ruei-Hong Cyu, Kuangye Wang, Yi Chung Wang, Ying-Chun Shen, Yi-Jen Yu

Publikováno v: ACS Materials Letters. 3:1757-1766

Resistive random access memory (RRAM) is vital to neuromorphic computing applications. However, filamentary RRAM cells are affected by transitions from abrupt switching to analog switching. In this...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73d1247fce4d1d295505ffbeea630f1c
https://doi.org/10.1021/acsmaterialslett.1c00513

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