Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Rueß, F."'
At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearan
Externí odkaz:
http://arxiv.org/abs/1205.0466
Autor:
Schofield, S. R., Curson, N. J., Simmons, M. Y., Ruess, F. J., Hallam, T., Oberbeck, L., Clark, R. G.
We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307599
Autor:
Nesvizhevsky, V. V., Boerner, H. G., Gagarsky, A. M., Petoukhov, A. K., Petrov, G. A., Abele, H., Baessler, S., Divkovic, G., Ruess, F. J., Stoeferle, Th., Westphal, A., Strelkov, A. V., Protasov, K. V., Voronin, A. Yu.
Publikováno v:
Phys.Rev. D67 (2003) 102002
The lowest stationary quantum state of neutrons in the Earth's gravitational field is identified in the measurement of neutron transmission between a horizontal mirror on the bottom and an absorber on top. Such an assembly is not transparent for neut
Externí odkaz:
http://arxiv.org/abs/hep-ph/0306198
Autor:
Clark, R. G., Brenner, R., Buehler, T. M., Chan, V., Curson, N. J., Dzurak, A. S., Gauja, E., Goan, H. S., Greentree, A. D., Hallam, T., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., McCallum, J. C., Milburn, G. J., O'Brien, J. L., Oberbeck, L., Pakes, C. I., Prawer, S. D., Reilly, D. J., Ruess, F. J., Schofield, S. R., Simmons, M. Y., Stanley, F. E., Starrett, R. P., Wellard, C., Yang, C.
Publikováno v:
Philosophical Transactions: Mathematical, Physical and Engineering Sciences, 2003 Jul . 361(1808), 1451-1471.
Externí odkaz:
https://www.jstor.org/stable/3559252
Autor:
Patocchi A., Wehrli A., Dubuis P. -H., Auwerkerken A., Leida C., Cipriani G., Passey T., Staples M., Diderot F., Philion V., Peil A., Laszakovits H., Rühmer T., Boeck K., Baniulis D., Strasser K., Vávra R., Guerra W., Masny S., Ruess F., Le Berre F., Nybom H., Tartarini S., Spornberger A., Pikunova A., Bus V.
Apple scab, caused by Venturia inaequalis, is a major fungal disease worldwide. Cultivation of scab-resistant cultivars would reduce the chemical footprint of apple production. However, new apple cultivars carrying durable resistances should be devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::a8a4a51af829dcfb9263bb6c145911ad
http://hdl.handle.net/11585/760080
http://hdl.handle.net/11585/760080
Autor:
Hörnle, O., Riedelsheimer, J., Trommsdorff, M., Keinath, T., Binder, F., Weinmann, E., Klodt, F., Zikeli, S., Pataczek, L., Rueß, F., Köppler, K., Glas, M., Mayr, U., Frey, M., Kromrey, V., Vedel, D., Klein, A.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5d4ff2ebfae19844ea97e1dc7956c71
Publikováno v:
Journal of Applied Physics; 8/1/2007, Vol. 102 Issue 3, p034308, 5p, 1 Chart, 3 Graphs
Publikováno v:
Journal of Aerospace Engineering. Jul2006, Vol. 19 Issue 3, p133-157. 25p. 2 Black and White Photographs, 1 Illustration, 30 Diagrams, 7 Charts, 2 Graphs.
Autor:
Ruess, F., Stösser, R.
Publikováno v:
Die Gartenbauwissenschaft, 1993 Sep 01. 58(5), 197-205.
Externí odkaz:
https://www.jstor.org/stable/43389055
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