Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Rudy Caluwaerts"'
Autor:
Nicolo Chiodarelli, Gerald Beyer, Yusaku Kashiwagi, Bart Vereecke, Daire J. Cott, Stefan De Gendt, Lieve Teugels, Masahito Sugiura, Cedric Huyghebaert, Zsolt Tokei, Philippe M. Vereecken, Rudy Caluwaerts, Marleen H. van der Veen, Marc Heyns
Publikováno v:
Microelectronic Engineering. 106:106-111
Carbon nanotubes (CNTs) were integrated successfully into 150nm contact holes having a TiN underlayer and a Cu single damascene top contact module. All the integration steps for CNT integration, for patterning the Cu top contact and the mask-set used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09d069e8d085980aba77090cc87cf570
https://doi.org/10.1016/j.mee.2012.09.004
https://doi.org/10.1016/j.mee.2012.09.004
Autor:
Philippe M. Vereecken, L. Carbonell, Rudy Caluwaerts, Zsolt Tokei, Katrien Strubbe, Tanya A. Atanasova
Publikováno v:
ECS Transactions. 41:83-97
The copper interconnect technology is constrained by the significant current distribution due to the terminal effect for resistive thin seeds. As a result, the current in the wafer center can become insufficient for cathodic protection of thin copper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d1335113993a4ea344a1851cded504
https://doi.org/10.1149/1.3699383
https://doi.org/10.1149/1.3699383
Autor:
Marianna Pantouvaki, Gerald Beyer, Hugo Bender, Koen Marrant, Farid Sebaai, Alain Moussa, Herbert Struyf, J. Versluijs, Bart Vereecke, Danny Goossens, Rudy Caluwaerts, Els Van Besien, Kristof Kellens
Publikováno v:
Microelectronic Engineering. 88:1618-1622
Scaling air-gap interconnects to 70nm pitch is demonstrated for the first time by combining air-gap technology (SiO"2 etch-back and non-conformal CVD) and the double patterning approach. A capacitance reduction of 45% was measured on the air-gaps com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce5eecff7311146a25f38bcd1dc537eb
https://doi.org/10.1016/j.mee.2011.03.006
https://doi.org/10.1016/j.mee.2011.03.006
Autor:
Alexis Franquet, S. Garaud, Guy Vereecke, F. Sinapi, Thierry Conard, Youssef Travaly, I. Hoflijk, Bert Brijs, Chao Zhao, Henny Volders, Zsolt Tokei, Hugo Bender, Chris Drijbooms, Wei-Min Li, D. Vanhaeren, H. Sprey, Alain M. Jonas, Rudy Caluwaerts, L. Carbonell, Alain Moussa
Publikováno v:
Microelectronic Engineering. 84:2460-2465
A ternary WN"xC"y system was deposited in a thermal ALD (atomic layer deposition) reactor from ASM at 300^oC in a process sequence using tungsten hexafluoride (WF"6), triethyl borane (TEB) and ammonia (NH"3) as precursors. The WC"x layers were deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f9ce21c9de7693605db1d66e1e00413
https://doi.org/10.1016/j.mee.2007.05.023
https://doi.org/10.1016/j.mee.2007.05.023
Autor:
H. Sprey, Nathan Kemeling, David De Roest, Youssef Travaly, Naoto Tsuji, Rudy Caluwaerts, Kiyohiro Matsushita, Shinya Kaneko, Patrick Verdonck, Gerald Beyer, Marc Schaekers
Publikováno v:
Surface and Coatings Technology. 201:9264-9268
A promising method to produce low- k films with a dielectric constant, k , less than 2.3, consists in using a porogen-based PECVD process in combination with UV cure for both porogen removal and thermo-mechanical properties enhancement. Aurora® ELK
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd4b130fc9bf626386f7501b4cf1b1b
https://doi.org/10.1016/j.surfcoat.2007.04.096
https://doi.org/10.1016/j.surfcoat.2007.04.096
Autor:
Gerald Beyer, P. Herrero Bernabé, Romano Hoofman, J. Michelon, C. Bruynseraede, Rudy Caluwaerts, Pascal Bancken, J. P. Gueneau de Mussy, S. List, Jinju Lee
Publikováno v:
Microelectronic Engineering. 83:2150-2154
Dual damascene self-aligned air gap structures have been fabricated through selective removal of interline plasma-damaged SiOC material using dilute HF solutions after metal CMP. The extent of the gaps was shown to be tuneable. The creation of interl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5ed48b0359a29452b45df2539cbca74
https://doi.org/10.1016/j.mee.2006.09.025
https://doi.org/10.1016/j.mee.2006.09.025
Autor:
Stefan E. Schulz, Cameliu Himcinschi, Marion Friedrich, M. Rennau, Dietrich R. T. Zahn, Rudy Caluwaerts, K. Schulze, Quoc Toan Le, Thomas Gessner, S. Frühauf
Publikováno v:
Microelectronic Engineering. 82:405-410
The target of our investigation is the evaluation of the effect of decreasing thickness on the relative permittivity of dielectric films for high advanced interconnects of IC's. Two kinds of SiCOH-films with similar chemical composition and thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8f0300bc6c32531e5c8c551c6b05d8a
https://doi.org/10.1016/j.mee.2005.07.023
https://doi.org/10.1016/j.mee.2005.07.023
Publikováno v:
Microelectronic Engineering. 64:63-71
The effect of trace oxygen on the annealing of Cu/Ta(N)/SiO2/Si(001) damascene structures was studied. The dry oxidation of copper was investigated by annealing the wafers at 420 °C for 20 min in N2 ambients with oxygen concentrations ranging from 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e463be1c2ef0b0c3d36279ebd681670
https://doi.org/10.1016/s0167-9317(02)00771-2
https://doi.org/10.1016/s0167-9317(02)00771-2
Autor:
Efrain Altamirano Sanchez, Paul F. Ma, Johan Wouters, Qian Luo, Katia Devriendt, L. Carbonell, Jiang Lu, Murali Narasimhan, Kavita Shah, Arvind Sundarrajan, Virginie Gravey, Joseph F. Aubuchon, Gerald Beyer, Nancy Heylen, A. Cockburn, Rudy Caluwaerts, Kristof Kellens, Henny Volders, Zsolt Tokei
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eec44fcb81fc30df62659a863637da8
https://doi.org/10.1109/iitc.2009.5090387
https://doi.org/10.1109/iitc.2009.5090387
Autor:
J. Waeterloos, Pascal Bancken, Romano Hoofman, Steven J. Rozeveld, V.H. Nguyen, J. Michelon, E. Beach, Gerald Beyer, Rudy Caluwaerts
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
As device dimensions scale down, the back-end-of-line dimensions scale down as well, which results in an increasing resistance-capacitance delay of the interconnect. In order to compensate for the increase in the capacitance part, porous low-k dielec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c395260c084c9beadd89226974c6f13
https://doi.org/10.1109/relphy.2006.251268
https://doi.org/10.1109/relphy.2006.251268