Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Rudolf Srnanek"'
Autor:
Marián Matejdes, Tomáš Zacher, Vojtech Szöcs, Juraj Darmo, Vladimír Danielik, Marián Janek, Dusan Velic, Frantisek Uherek, Rudolf Srnanek, Štefan Kavecký, Daniel Haško, Andrej Vincze, Alexander Satka, Jozef Matuška, Dusan Lorenc
Publikováno v:
International Journal of Applied Ceramic Technology. 10:E167-E176
Pyrolytic boron nitride (pBN) was prepared with a nonenergetic chemical vapor deposition. Two tests were performed (i) short time deposition to investigate rate and volume deposition of injected reaction gases and (ii) long time deposition to charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd3b1c4ea34c618c9b445f995e8383f8
https://doi.org/10.1111/ijac.12102
https://doi.org/10.1111/ijac.12102
Autor:
Zuzka Križanová, Igor Krupa, György Radnóczi, Volkan Cecen, Abderrahim Boudenne, Rudolf Srnanek, Ivo Vávra
Publikováno v:
Polymer-Plastics Technology and Engineering. 51:1388-1393
Polymeric composites were prepared using ethylene-vinylacetate (EVA) matrix and expanded graphite (EG). Mechanical properties were investigated and it was found that Young's modulus and the yield stress of EVA-EG composites significantly increased wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a55d9a6028243702f5ae3bdc13ac0a8c
https://doi.org/10.1080/03602559.2012.704114
https://doi.org/10.1080/03602559.2012.704114
Autor:
Alexander Satka, Christopher R. Bowen, Duncan W. E. Allsopp, Lajos Tóth, Quanzhong Jiang, Wang Nang Wang, Michael Edwards, Béla Pécz, Rudolf Srnanek, Philip A. Shields, Jaroslav Kováč
Publikováno v:
physica status solidi c. 9:650-653
This paper reports the direct growth by MOVPE of high-quality, crack-free III-nitrides (∼350 nm) on composite substrates comprising an ultra-thin Si (111) layer on which polycrystalline diamond (PD) has been deposited. The Si/PD substrates are desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9374bf9c7749d95280f33abf697e5fe
https://doi.org/10.1002/pssc.201100368
https://doi.org/10.1002/pssc.201100368
Autor:
Rolf H. Jansen, Holger Kalisch, Michael Heuken, Hannes Behmenburg, C. Giesen, Rudolf Srnanek, Jaroslav Kováč
Publikováno v:
Journal of Crystal Growth. 316:42-45
In this paper, the influence of V/III molar flow ratio during AlN growth on SiC on growth mode and in-plane strain is investigated. AlN layers of ∼300 nm thickness were grown by metal-organic vapor phase epitaxy (MOVPE) on semi-insulating 6H-SiC an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb07b3b1d4b1be247de2d4c4554e6b1a
https://doi.org/10.1016/j.jcrysgro.2010.12.058
https://doi.org/10.1016/j.jcrysgro.2010.12.058
Publikováno v:
Open Physics, Vol 7, Iss 2, Pp 270-278 (2009)
To improve Organic Thin Film Transistor (OTFT) properties we study OTFT semiconductor/dielectric interfacial properties via examination of the gate dielectric using thin Parylene C layer. Structural and morphology properties of pentacene layers depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::910769f50d25cbf8d88fb7d1a6cca68f
https://doaj.org/article/4318d1b1680f48529f6bbdc3451ad7ce
https://doaj.org/article/4318d1b1680f48529f6bbdc3451ad7ce
Autor:
Jaroslava Skriniarova, Rudolf Srnanek, Beata Ściana, Marek Tłaczała, Iwona Zborowska-Lindert, M. Florovic, Jaroslav Kováč, Damian Radziewicz, B. Boratyński
Publikováno v:
Journal of Crystal Growth. 310:5227-5231
Heterojunction bipolar phototransistors (HPTs), based on GaAs technology, are widely used in the optoelectronic-integrated circuit (OEIC) [H.T. Lin, D.H. Rich, A. Larsson, J. Appl. Phys. 79 (1996) 8015 [1] ; Lin Chien-chung, M. Wayne, J.S. Harris Jr.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9de47acdf2070aaa69483f7acef5d0df
https://doi.org/10.1016/j.jcrysgro.2008.08.046
https://doi.org/10.1016/j.jcrysgro.2008.08.046
Autor:
Wilfried Vandervorst, Francesca Clemente, Rudolf Srnanek, Guy Brammertz, Damian Radziewicz, B. Sciana, R. Kinder, Marc Meuris, Jozefien Goossens, Zhiqiang Li, Pierre Eyben, Trudo Clarysse, D. Vanhaeren
Publikováno v:
Materials Science in Semiconductor Processing. 11:259-266
As CMOS is approaching the 22 nm node, the importance of high-mobility materials such as Ge and GaAs is rapidly increasing. For the timely development of these new technologies accurate dopant and carrier-profiling solutions for source-drain extensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67d5f935b3ba89c7afdf7c63eb378d64
https://doi.org/10.1016/j.mssp.2008.11.010
https://doi.org/10.1016/j.mssp.2008.11.010
Autor:
Peter Kordos, Damian Radziewicz, Rudolf Srnanek, Jaroslav Kováč, B. Sciana, J. Geurts, M. Lentze, M. Florovic, Andrej Vincze, Marek Tłaczała, D.S. Mc Phail, Daniel Donoval, Gert Irmer
Publikováno v:
Thin Solid Films. 497:7-15
We present a new method of determining the depth profile of the doping concentration in Si δ-doped GaAs layers and GaAs-based heterostructures by micro-Raman spectroscopy. In-depth resolution is obtained by scanning the laser spot along a shallow be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea73278ddcad68f42a2d450201060357
https://doi.org/10.1016/j.tsf.2005.08.155
https://doi.org/10.1016/j.tsf.2005.08.155
Autor:
Damian Radziewicz, P. Prunici, B. Sciana, Marek Tłaczała, Andrej Vincze, M. Florovic, Rudolf Srnanek, Gert Irmer, D.S. Mc Phail, M. Vesely, Jaroslav Kováč
Publikováno v:
Vacuum. 80:20-23
A new method for determining the doping concentrations in very thin GaAs layers is presented. The method is based on the evaluation and calibration of the changes in ratio of transversal to longitudinal optical phonon intensities measured by micro-Ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf2fda0d6e8fd53d0bddb651884fae24
https://doi.org/10.1016/j.vacuum.2005.07.021
https://doi.org/10.1016/j.vacuum.2005.07.021
Autor:
Daniel Donoval, Gert Irmer, M. Lentze, B. Sciana, Damian Radziewicz, Ivan Novotny, Marek Tłaczała, Rudolf Srnanek, M. Florovic, J. Geurts
Publikováno v:
Applied Surface Science. 243:96-105
The properties of the photoexcited plasma in n-GaAs and its influence on micro-Raman spectra were studied on bevelled structures. The modes of the photoexcited free-carriers plasmon–LO–phonon (PLP) coupling have been detected in the surface deple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73f7ab58f35582d061a9e50aa0536dca
https://doi.org/10.1016/j.apsusc.2004.09.048
https://doi.org/10.1016/j.apsusc.2004.09.048