Zobrazeno 1 - 10
of 231
pro vyhledávání: '"Rudolf M. Tromp"'
Autor:
Tobias A. de Jong, Tjerk Benschop, Xingchen Chen, Eugene E. Krasovskii, Michiel J. A. de Dood, Rudolf M. Tromp, Milan P. Allan, Sense Jan van der Molen
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Local variations of twist angle and strain in twisted bilayer graphene (TBG) can produce relevant changes in the electronic properties of the system. Here, high-resolution low energy electron microscopy is used to characterize the spatial and tempora
Externí odkaz:
https://doaj.org/article/bd31fd8cd452475d91f6e2a4ff7b9676
Autor:
Johannes Jobst, Alexander J. H. van der Torren, Eugene E. Krasovskii, Jesse Balgley, Cory R. Dean, Rudolf M. Tromp, Sense Jan van der Molen
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
Heterostructures of graphene and hexagonal boron nitride have great potential for high-mobility electronics, yet little is known about the electronic interaction between these two atomically thin materials. Here, the authors perform angle-resolved re
Externí odkaz:
https://doaj.org/article/e09a255f228345dca396bbfadf1c3f7e
Publikováno v:
Ultramicroscopy 181, 74-80 (2017)
In a lot of systems, charge transport is governed by local features rather than being a global property as suggested by extracting a single resistance value. Consequently, techniques that resolve local structure in the electronic potential are crucia
Externí odkaz:
http://arxiv.org/abs/1910.05763
Publikováno v:
Physical Review B, 107(7)
In van der Waals (vdW) materials, the electron mean free path (MFP) is largely influenced by the discrete states in the unoccupied band structure. So far, the influence of these states has only been measured in graphene, while all measurements on oth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be39a76b52979b9c63203ecddcaeb405
https://doi.org/10.1103/physrevb.107.075427
https://doi.org/10.1103/physrevb.107.075427
Autor:
Yu Zhang, Sense Jan van der Molen, Albert M. Brouwer, Johannes Jobst, Ivan Bespalov, Rudolf M. Tromp, Sonia Castellanos, Jarich Haitjema
Publikováno v:
ACS Applied Materials and Interfaces
ACS Applied Materials and Interfaces, 12(8), 9881-9889
ACS Applied Materials and Interfaces, 12(8), 9881-9889. American Chemical Society
ACS Applied Materials and Interfaces, 12(8), 9881-9889
ACS Applied Materials and Interfaces, 12(8), 9881-9889. American Chemical Society
Extreme ultraviolet (EUV) lithography (13.5 nm) is the newest technology that allows high-throughput fabrication of electronic circuitry in the sub-20 nm scale. It is commonly assumed that low-energy electrons (LEEs) generated in the resist materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15542b230b9ecf3b966cd83aa43dbeb4
https://doi.org/10.1021/acsami.9b19004
https://doi.org/10.1021/acsami.9b19004
Autor:
Martin Hof, Sense Jan van der Molen, Radek Šachl, Raphaël Marchand, Thomas Juffmann, Martin Kalbac, Mariana Amaro, Rudolf M. Tromp
Publikováno v:
Physical Review Applied, 16(1)
Physical Review Applied
Physical Review Applied
The imaging of dynamical processes at interfaces and on the nanoscale is of great importance throughout science and technology. While light-optical imaging techniques often cannot provide the necessary spatial resolution, electron-optical techniques
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70cee802e3c2efee4387f4768042b2ac
http://arxiv.org/abs/2102.13010
http://arxiv.org/abs/2102.13010
Publikováno v:
The Journal of Physical Chemistry C
The Journal of Physical Chemistry. C, Nanomaterials and Interfaces
The Journal of Physical Chemistry. C, Nanomaterials and Interfaces
Crystalline films of pentacene molecules, two to four monolayers in thickness, are grown via in situ sublimation on silicon substrates in the ultrahigh vacuum chamber of a low-energy electron microscope. It is observed that the diffraction pattern of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d58feee7822de2b20d365df03eaeca61
http://hdl.handle.net/1887/3243982
http://hdl.handle.net/1887/3243982
Publikováno v:
Ultramicroscopy, 222, 113199
Ultramicroscopy
Ultramicroscopy
Transmission electron microscopy at very low energy is a promising way to avoid damaging delicate biological samples with the incident electrons, a known problem in conventional transmission electron microscopy. For imaging in the 0-30 eV range, we a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88cd8769f8e08c3e3b6848e2539b5b71
http://arxiv.org/abs/2009.09856
http://arxiv.org/abs/2009.09856
Publikováno v:
Ultramicroscopy. 183:8-14
In a lot of systems, charge transport is governed by local features rather than being a global property as suggested by extracting a single resistance value. Consequently, techniques that resolve local structure in the electronic potential are crucia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::099a46ae78e816b9c82129981c33080e
https://doi.org/10.1016/j.ultramic.2017.10.009
https://doi.org/10.1016/j.ultramic.2017.10.009
Autor:
Rudolf M. Tromp, Weishi Wan, Krzysztof P. Grzelakowski, Lei Yu, Zheng Wei, Wen-Xin Tang, Haibo Li
Publikováno v:
Ultramicroscopy. 183:30-37
The effects of space charge, aberrations and relativity on temporal compression are investigated for a compact spherical electrostatic capacitor (α-SDA). By employing the three-dimensional (3D) field simulation and the 3D space charge model based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc8a75b36b3af28b03c4b27312a7c4a5
https://doi.org/10.1016/j.ultramic.2017.07.003
https://doi.org/10.1016/j.ultramic.2017.07.003