Zobrazeno 1 - 10
of 137
pro vyhledávání: '"Rudolf Hezel"'
This book offers a bird's-eye view of the recent development trends in photovoltaics – a big business field that is rapidly growing and well on its way to maturity. The book describes current efforts to develop highly efficient, low-cost photovolta
Publikováno v:
Progress in Photovoltaics: Research and Applications. 12:21-31
We have studied the surface passivation of silicon by deposition of silicon nitride (SiN) in an industrial-type inline plasma-enhanced chemical vapor deposition (PECVD) reactor designed for the continuous coating of silicon solar cells with high thro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c9e25a3f5eb62bec3e51339298f2330
https://doi.org/10.1002/pip.523
https://doi.org/10.1002/pip.523
This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N. This volume, 3 4'Silicon'Supplement Volume B Sc, is devoted to applications of silico
Publikováno v:
Solid State Phenomena. :223-228
The efficiency of silicon solar cells made on boron-doped Czochralski silicon is known to degrade under illumination. A boronand oxygen-related metastable defect has been held responsible for this performance loss. This paper aims at clarifying the q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ba02ee1651c6d0719d981461884435
https://doi.org/10.4028/www.scientific.net/ssp.95-96.223
https://doi.org/10.4028/www.scientific.net/ssp.95-96.223
Autor:
Rudolf Hezel
Publikováno v:
Progress in Photovoltaics: Research and Applications. 11:549-556
Utilizing the light reflected by simple means onto the rear surface of solar cells is an effective way of lowering the cost of solar electricity, since more power is generated per cell. Innovative bifacial photovoltaic modules have been introduced, s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86113f096dac2660ec029172a840ace2
https://doi.org/10.1002/pip.510
https://doi.org/10.1002/pip.510
Publikováno v:
Progress in Photovoltaics: Research and Applications. 11:33-38
Up to now solar cells fabricated on tricrystalline Czochralski-grown silicon (tri-Si) have shown relatively low short-circuit current densities of about 31–33 mA/cm2 because the three {110}-oriented grains cannot effectively be textured by commonly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae44f717a1c019c33d8f219a41eebed
https://doi.org/10.1002/pip.479
https://doi.org/10.1002/pip.479
Autor:
Rudolf Hezel
Publikováno v:
Solar Energy Materials and Solar Cells. 74:25-33
To improve the economy of photovoltaics, efficiencies of solar cells have to be drastically increased without using complex technologies. This work demonstrates that with the obliquely evaporated contact metal-insulator-semiconductor (MIS)-n+p solar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b681134183437828d6082bf805d9b56e
https://doi.org/10.1016/s0927-0248(02)00044-2
https://doi.org/10.1016/s0927-0248(02)00044-2
Publikováno v:
Solar Energy Materials and Solar Cells. 72:255-261
To enhance the bulk lifetime of multicrystalline silicon material, gettering of impurities and hydrogen passivation of defects are investigated. In edge-defined film-fed grown (EFG) ribbon silicon, an aluminium-enhanced hydrogenation of defects by si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73b1e1c631b8fd6f435464f895621a60
https://doi.org/10.1016/s0927-0248(01)00172-6
https://doi.org/10.1016/s0927-0248(01)00172-6
Publikováno v:
Progress in Photovoltaics: Research and Applications. 10:271-278
Many solar cells incorporating SiNx films as a rear surface passivation scheme have not reached the same high level of cell performance as solar cells incorporating high-temperature-grown silicon dioxide films as a rear surface passivation. In this p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faacaa10dafae93fb163f822a38d30c2
https://doi.org/10.1002/pip.420
https://doi.org/10.1002/pip.420