Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Rudolf Brüggemann"'
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2019, 216 (13), pp.1800877. ⟨10.1002/pssa.201800877⟩
physica status solidi (a), Wiley, 2019, 216 (13), pp.1800877. ⟨10.1002/pssa.201800877⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b8ef26dde744f223cd5f0a9c683ea0b
https://hal-centralesupelec.archives-ouvertes.fr/hal-02308332
https://hal-centralesupelec.archives-ouvertes.fr/hal-02308332
Publikováno v:
physica status solidi (RRL)-Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2019, 13 (12), pp.1900411. ⟨10.1002/pssr.201900411⟩
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2019, 13 (12), pp.1900411. ⟨10.1002/pssr.201900411⟩
International audience; A set of (p) a‐Si:H/(i) a‐Si:H/(n) c‐Si heterostructures is investigated by coplanar conductance measurements. The thickness of the (i) a‐Si:H buffer layer is varied between 2 and 50 nm, well beyond the values used in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9702abc0270aa0cbd23adf2cdc273240
https://hal.archives-ouvertes.fr/hal-02301811
https://hal.archives-ouvertes.fr/hal-02301811
Autor:
Sven Burdorf, Rudolf Brüggemann
Publikováno v:
physica status solidi (a). 213:1710-1716
authoren Photoluminescence (PL) from semiconductors can be related with the quasi-Fermi level splitting of the electron-hole-ensemble from which the radiation originates. For the interpretation of the temperature-dependent c-Si:H PL Planck's generali
Publikováno v:
Energy Procedia
Energy Procedia, Elsevier, 2017, 124, pp.10-17. ⟨10.1016/j.egypro.2017.09.331⟩
Silicon PV 2017
Silicon PV 2017, Apr 2017, Freiburg, Germany
Energy Procedia, 2017, 124, pp.10-17. ⟨10.1016/j.egypro.2017.09.331⟩
Energy Procedia, Elsevier, 2017, 124, pp.10-17. ⟨10.1016/j.egypro.2017.09.331⟩
Silicon PV 2017
Silicon PV 2017, Apr 2017, Freiburg, Germany
Energy Procedia, 2017, 124, pp.10-17. ⟨10.1016/j.egypro.2017.09.331⟩
International audience; District heating networks are commonly addressed in the literature as one of the most effective solutions for decreasing the greenhouse gas emissions from the building sector. These systems require high investments which are r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a1479dc9d4c8c31ada432092fba76da
https://hal-centralesupelec.archives-ouvertes.fr/hal-01631793/document
https://hal-centralesupelec.archives-ouvertes.fr/hal-01631793/document
Autor:
Rudolf Brüggemann, Gottfried H. Bauer, Niklas Nilius, Gerhard Jakob, Sebastian ten Haaf, Hendrik Sträter
Publikováno v:
physica status solidi (b). 251:2247-2256
authorenWe present a temperature- and intensity-dependent photoluminescence (PL) study of the binary semiconductor on the mm-scale and a laterally resolved PL measurement with a resolution of nm. The films can show a rather rough surface with needles
Autor:
Thomas Orgis, A. Weber, Dimitrios Hariskos, Roland Mainz, O. Neumann, Gottfried H. Bauer, Roland Scheer, Wolfram Witte, H. Rodriguez-Alvarez, Jens Dietrich, Hans-Werner Schock, Karsten Albe, Daniel Abou-Ras, Max Meessen, Stefan Paetel, Rudolf Brüggemann, Johan Pohl, Jürgen Christen, Christian Boit, Michael Powalla, Matthias Maiberg, Thomas Unold, Mathias Müller, Frank Bertram, A. Eicke
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:717-733
The gallium gradient in Cu(In,Ga)Se2 (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co-evaporation processes, plays a key role in the device performance of CIGS thin-film modules. In this contrib
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:94-105
Optical and electrical simulations were carried out for thin film silicon solar tandem cells with intermediate reflector layer (IRL) between top and bottom cell and compared with experimental external quantum efficiency and current voltage characteri
Autor:
Sebastian Siol, Hendrik Sträter, Gottfried H. Bauer, Rudolf Brüggemann, Wolfram Jaegermann, Andreas Klein
Publikováno v:
MRS Proceedings. 1538:191-196
We have studied Cu2S absorber layers prepared by physical vapor deposition (PVD) by calibrated spectral photoluminescence (PL) and by confocal PL as function of temperature T and excitation fluxes to obtain the absolute PL-yield at an excitation flux
Autor:
Rudolf Brüggemann, Hamza Cansever, Vladimir Smirnov, Mehmet Güneş, Gökhan Yilmaz, Friedhelm Finger
Publikováno v:
Journal of Non-Crystalline Solids. 358:2074-2077
Metastability effects in microcrystalline silicon (μc-Si:H) thin films have been investigated using dark conductivity, σD, photoconductivity, σph, and sub-bandgap absorption methods. Nitrogen and inert gasses can cause reversible aging effect in c