Zobrazeno 1 - 10
of 256
pro vyhledávání: '"Rudiger Quay"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 487-497 (2023)
In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the integration of a monolithic gate driver. This tutorial-style
Externí odkaz:
https://doaj.org/article/584522298ecd44e6a631f124299b467a
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 3, Pp 876-885 (2022)
Active or synchronous rectification is used today to further increase the efficiency of mass-market power supplies by eliminating the turn-on voltage of rectifier diodes, thus reducing conduction losses. However, the active rectification is usually r
Externí odkaz:
https://doaj.org/article/b866a741cb2f467ab9010020204edae1
Autor:
Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Doring, Patrick Waltereit, Rudiger Quay, Oliver Ambacher
Publikováno v:
IEEE Access, Vol 9, Pp 163122-163137 (2021)
GaN technology is on the advance for the use in power ICs thanks to space-saving integrated circuit components and the increasing number of integrated devices. This work experimentally investigates a number of key building blocks for GaN power integr
Externí odkaz:
https://doaj.org/article/9bebc1047dce479a8d075402630892ac
Autor:
Erdin Ture, Peter Bruckner, Birte-Julia Godejohann, Rolf Aidam, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rudiger Quay, Oliver Ambacher
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016)
Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors ar
Externí odkaz:
https://doaj.org/article/0bfbf3a76e014c1997607dcc0c39d50d
Autor:
Bersant Gashi, Oliver Ambacher, Markus Rosch, Dominik Meier, Laurenz John, Arnulf Leuther, Sandrine Wagner, Axel Tessmann, Rudiger Quay
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 11:660-675
The modeling, design, and experimental evaluation of both a 400-GHz transmitter and receiver submillimeter-wave monolithic integrated circuit (S-MMIC) is presented in this article. These S-MMICs are intended for a radar-based system in the aforementi
Autor:
Stefan Moench, Richard Reiner, Kareem Mansour, Michael Basler, Patrick Waltereit, Rudiger Quay, Kilian Bartholome
Publikováno v:
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Autor:
Friedbert van Raay, Fabian Thome, Christian Friesicke, Roger Lozar, Sebastian Krause, Michael Mikulla, Rudiger Quay
Publikováno v:
2022 52nd European Microwave Conference (EuMC).
Publikováno v:
2022 52nd European Microwave Conference (EuMC).
Autor:
Christian Friesicke, Philipp Neininger, Thomas Zwick, Peter Brückner, Fabian Thome, Laurenz John, Rudiger Quay
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques, 69 (5), 2541-2553
In this article, we summarize the theoretical matching boundaries and show the limitations they implicate for real-world amplifier design. Starting with a common schematic prototype, we investigate the question of how to realize its electrical respon
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.