Zobrazeno 1 - 10
of 360
pro vyhledávání: '"Rud Yu. V."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 31-34 (2008)
The paper presents research results on the photosensitivity spectra of the obtained Ni-n-GaAs structures in the photon energy range 0.9 ... 2.3 eV when the side covered with translucent nickel layer is illuminated. It has been experimentally establis
Externí odkaz:
https://doaj.org/article/b77b475ce0184668881f3c7667e0487c
Publikováno v:
Semiconductors. Aug2010, Vol. 44 Issue 8, p1025-1029. 5p. 1 Diagram, 4 Graphs.
Publikováno v:
Technical Physics. Apr2010, Vol. 55 Issue 4, p517-520. 4p. 4 Graphs.
Publikováno v:
Semiconductors. Jan2010, Vol. 44 Issue 1, p45-49. 5p. 1 Chart, 4 Graphs.
Autor:
Rud, V. Yu.1 rudvas@spbstu.ru, Rud, Yu. V.2, Vaipolin, A. A.2, Bodnar, I. V.3, Osipiva, M. A.3, Ushakova, T. N.2
Publikováno v:
Semiconductors. Jul2009, Vol. 43 Issue 7, p858-864. 7p. 1 Diagram, 1 Chart, 5 Graphs.
Publikováno v:
Semiconductors. Apr2009, Vol. 43 Issue 4, p425-428. 4p. 1 Diagram, 1 Chart, 2 Graphs.
Autor:
Bulyarski, S. V.1, Rud', Yu. V.2 yuryrud@mail.ioffe.ru, Vostretsova, L. N.1, Kagarmanov, A. S.1, Trifonov, O. A.1
Publikováno v:
Semiconductors. Apr2009, Vol. 43 Issue 4, p440-446. 7p. 1 Chart, 2 Graphs.
Autor:
Rud, V. Yu.1 rudvas@spbstu.ru, Rud, Yu. V.2, Bodnar, I. V.3, Gorbachev, D. V.2, Ushakova, T. N.2
Publikováno v:
Semiconductors. Mar2009, Vol. 43 Issue 3, p374-378. 5p. 2 Charts, 3 Graphs.
Publikováno v:
Semiconductors. Sep2006, Vol. 40 Issue 9, p1028-1035. 8p. 7 Graphs.
Autor:
Rud', V. Yu.1 rudvas@spbstu.ru, Rud', Yu. V.2, Gremenok, V. F.3, Zaretskaya, E. P.3, Sergeeva, O. N.3
Publikováno v:
Semiconductors. Sep2005, Vol. 39 Issue 9, p1035-1039. 5p.