Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ruchil Jain"'
Autor:
Prantik Mahajan, Vishal Ganesan, Nandha Kumar Subramani, Ruchil Jain, Souvick Mitra, Robert Gauthier
Publikováno v:
2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e718cfb897e6e2ebc336910aaf6a04
https://doi.org/10.1109/ipfa55383.2022.9915731
https://doi.org/10.1109/ipfa55383.2022.9915731
Autor:
Ruchil Jain, Felix Holzmueller, Peter Baars, Alban Zaka, Elodie Ebrard, Ketankumar Tailor, Tom Herrmann, Damien Angot
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae6e905ed20f151dfc98f0724948e5b
https://doi.org/10.1109/ispsd49238.2022.9813636
https://doi.org/10.1109/ispsd49238.2022.9813636
Autor:
Tom Herrmann, Alban Zaka, Zhixing Zhao, Binit Syamal, Wafa Arfaoui, Ruchil Jain, Ming-Cheng Chang, Sameer Jain, Shih Ni Ong
Publikováno v:
Solid-State Electronics. 199:108512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9080e67d663ab8098c988e921925f848
https://doi.org/10.1016/j.sse.2022.108512
https://doi.org/10.1016/j.sse.2022.108512
Publikováno v:
IndraStra Global.
We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ea20b5e9f66d5d2ddde2414b5fe3cc9
http://hdl.handle.net/10054/8204
http://hdl.handle.net/10054/8204