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of 52
pro vyhledávání: '"Rubio Sola, Jose Antonio"'
Autor:
Fornt Mas, Jordi, Jin, Leixin, Etxezarreta, Imanol, Fontova, Pau, Altet Sanahujes, Josep, Calomarde Palomino, Antonio, Morancho Llena, Enrique, Moll Echeto, Francisco de Borja, Rubio Sola, Jose Antonio
Publikováno v:
2022 37th Conference on Design of Circuits and Integrated Circuits (DCIS).
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Publikováno v:
2022 IEEE 22nd International Conference on Nanotechnology (NANO).
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Publikováno v:
2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST).
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Autor:
Rodriguez, Rosana, Martin Martinez, Javier, Salvador, Emili, Crespo Yepes, Albert, Miranda, Enrique Alberto, Nafria, Montserrat, Rubio Sola, Jose Antonio, Ntinas, Vasileios, Sirakoulis, Georgios Ch.
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
This chapter describes the fundamental characteristics of Complementary Metal-Oxide-Semiconductor (CMOS) technology, and how it can be assessed for system reliability studies. After some definitions, the dominating manufacturing technologies are desc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3484::e470505ad6e5172ac299517044172a65
https://hdl.handle.net/2117/341025
https://hdl.handle.net/2117/341025
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
This chapter describes the fundamental characteristics of Complementary Metal-Oxide-Semiconductor (CMOS) technology, and how it can be assessed for system reliability studies. After some definitions, the dominating manufacturing technologies are desc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=RECOLECTA___::c2e27ef48a301d118bddb33e2d1dae85
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c5bd5e55355bf91252bc49f60a5c262b
https://hdl.handle.net/2117/168772
https://hdl.handle.net/2117/168772
Autor:
Maestro, M, Marin-Martinez, J., Crespo-Yepes, A., Escudero, Manel, Rodriguez, R., Nafría Maqueda, Montserrat|||0000-0002-9549-2890, Aymerich, X., Rubio Sola, Jose Antonio|||0000-0003-1625-1472
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3a33ca9f5d46fa89aa70d35ccf8758a8
https://hdl.handle.net/2117/113202
https://hdl.handle.net/2117/113202
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Sub-threshold circuits (sub-V T) are a promising alternative in the implementation of low power electronics. The implementation of gain-cell embedded DRAMs (eDRAMs) based on FinFET devices requires a careful design to achieve the maximum cell perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a048f2182c7f0312866479f3ce603d26
http://hdl.handle.net/2117/122302
http://hdl.handle.net/2117/122302
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
Universitat Jaume I
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
Universitat Jaume I
Emerging devices for future memory technologies have attracted great attention recently. Memristors are one of the most favorable such devices, due to their high scalability and compatibility with CMOS fabrication process. Alongside their benefits th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0b6aa17cca874448a0d444b9c90a54a2
https://hdl.handle.net/2117/27219
https://hdl.handle.net/2117/27219