Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells.

Autor: Kind, R., van Swaaij, R. A. C. M. M., Rubinelli, F. A., Solntsev, S., Zeman, M.

Publikováno v: Journal of Applied Physics; Nov2011, Vol. 110 Issue 10, p104512, 8p, 1 Chart, 8 Graphs

Performance of annealed hybrid silicon heterojunctions: A numerical computer study.

Autor: Rubinelli, F. A., Marsal, L. F., Pallarès, J.

Publikováno v: Journal of Applied Physics; 2/1/2005, Vol. 97 Issue 3, p034904, 9p, 6 Charts, 8 Graphs

Using computer modeling analysis in single junction a-SiGe:H p–i–n solar cells.

Autor: Rubinelli, F. A., Jime´nez, R., Rath, J. K., Schropp, R. E. I.

Publikováno v: Journal of Applied Physics; 2/15/2002, Vol. 91 Issue 4, p2409, 8p, 1 Chart, 10 Graphs

Effects of 10 MeV proton irradiation on III-V solar cells

Autor: Yaccuzzi, E., Ochoa Gómez, Mario, Barrera, Marcelo, Barrigón Montañés, Enrique, Rodríguez, S., Espinet González, Pilar, Ibarra, M. L., García, J., Godfrin, E. M., Alurralde, M., Rubinelli, F., Algora del Valle, Carlos, Rey Llorente, Ignacio del, Plá, J.

Publikováno v: 31st European Photovoltaic Solar Energy Conference and Exhibition | 31st European Photovoltaic Solar Energy Conference and Exhibition | 14/09/2015-18/09/2015 | Hamburg, Germany
Archivo Digital UPM
Universidad Politécnica de Madrid

In this work we present our latest results and analysis of a 10 MeV proton irradiation experiment performed on III-V solar cells. A set of representative devices were irradiated for different fluences, including latticematched GaInP/GaInAs/Ge triple

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::cc650ca7da00ec108c00e1c3d67508eb
https://oa.upm.es/41915/

Distribution of the electrostatic potential barrier in the n-p, amorphous-crystalline silicon heterojunction.

Autor: Rubinelli, F. A., Battioni, M. R., Buitrago, R. H.

Publikováno v: Journal of Applied Physics; 1/15/1987, Vol. 61 Issue 2, p650, 9p, 1 Diagram, 6 Graphs