Zobrazeno 1 - 10
of 290
pro vyhledávání: '"Rubi, D"'
The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. However, key aspects of the dynamics of conductive filament formation and t
Externí odkaz:
http://arxiv.org/abs/2410.23268
Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combination of experiments and theoretical simulations, OV dynamics in $Pt/Ta
Externí odkaz:
http://arxiv.org/abs/2406.13676
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at
Externí odkaz:
http://arxiv.org/abs/2405.10909
Autor:
Ramírez, G. A., Acevedo, W. Román, Rengifo, M., Nuñez, J. M., Aguirre, M. H., Briático, J., Rubi, D.
Publikováno v:
Appl. Phys. Lett. 122, 063503 (2023)
In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films. At low temperatures (50 K), we observed volatile resistive changes
Externí odkaz:
http://arxiv.org/abs/2211.04955
Autor:
Fontcuberta, J., Balcells, L., Navarro, J., Rubi, D., Martínez, B., Frontera, C., García-Muñoz, J. L., Lacaba, M., González, A. M., Forniés, C., Calleja, A., Aragonès, L.
Publikováno v:
Boletín de la Sociedad Española de Cerámica y Vidrio, Vol 43, Iss 3, Pp 627-633 (2004)
Magnetoresistive ceramics, based on half-metallic ferromagnetic oxides have received renewed attention in the last few years because of their possible applications. Here, we review some recent progress on the development of magnetoresistive ceramic m
Externí odkaz:
https://doaj.org/article/79e596bcefe74e5aa0d8027981d35ccb
Autor:
Acevedo, W. Román, Aguirre, M. H., Ferreyra, C., Sánchez, M. J., Rengifo, M., Bosch, C. A. M. van den, Aguadero, A., Noheda, B., Rubi, D.
Publikováno v:
Final version published in APL Materials (Vol.10, Issue 1, 2022)
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary f
Externí odkaz:
http://arxiv.org/abs/2110.03507
Autor:
Acevedo, W. Román, Di Napoli, S., Romano, F., Ruiz, G. Rodríguez, Nukala, P., Quinteros, C., Lecourt, J., Lüders, U., Vildosola, V., Rubi, D.
Publikováno v:
Phys. Rev. B 104, 125307 (2021)
BaBiO$_3$ is a charged ordered Peierls-like perovskite well known for its superconducting properties upon K or Pb doping. We present a study on the transport and electronic properties of BaBiO$_3$ perovskite with strong Bi-deficiency. We show that it
Externí odkaz:
http://arxiv.org/abs/2104.04573
Publikováno v:
Phys. Rev. Applied 14, 044045 (2020)
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the competition of t
Externí odkaz:
http://arxiv.org/abs/2006.10891
Akademický článek
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Autor:
Ferreyra, C., Sánchez, M. J., Aguirre, M., Acha, C., Bengió, S., Lecourt, J., Lüders, U., Rubi, D.
Publikováno v:
final version Published in Nanotechnology vol 31 155204 (2020)
The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states.
Externí odkaz:
http://arxiv.org/abs/1908.03056