Výsledky vyhledávání - "Ruben Favaro"

Crystalline (Al1–xBx)PSi3 and (Al1–xBx)AsSi3 Tetrahedral Phases via Reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)

Autor: Toshihiro Aoki, Patrick M. Wallace, Ruben Favaro, John Kouvetakis, Chi Xu, Andrew Edward White, Jose Menendez, Patrick Sims

Publikováno v: Chemistry of Materials. 27:3030-3039

Crystalline Al1–xBxPSi3 alloys (x = 0.04–0.06) are grown lattice-matched on Si(100) substrates by reactions of P(SiH3)3 and Al(BH4)3 using low pressure CVD. The materials have been characterized fo...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c997b4367836be397fe4a273f2f3124
https://doi.org/10.1021/acs.chemmater.5b00412

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Molecular Strategies for Configurational Sulfur Doping of Group IV Semiconductors Grown on Si(100) Using S(MH3)2 (M = Si,Ge) Delivery Sources: An Experimental and Theoretical Inquiry

Autor: Gordon Grzybowski, Ruben Favaro, John Kouvetakis, Jose Menendez, Andrew Chizmeshya, C. L. Senaratne

Publikováno v: Chemistry of Materials. 26:4447-4458

We report a new doping protocol of pure Ge films grown on Si and related Si/Sn materials based on S delivered from high reactivity hydride molecules S(MH3)2 (M = Si,Ge). The new doping strategy targets next generation semiconductor applications requi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::23272379cc6c57050c24faa69c9fb3f0
https://doi.org/10.1021/cm501434z

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Synthesis and optical properties of Sn-rich Ge1––Si Sn materials and devices

Autor: James Gallagher, Jose Menendez, Liying Jiang, John Kouvetakis, Chi Xu, Richard T. Beeler, Ruben Favaro

Publikováno v: Thin Solid Films. 557:177-182

Sn-rich Ge 1 − x − y Si x Sn y alloys ( y > x ) have been deposited on Si(100) using recently developed growth processes aimed at achieving the material quality and compositions required to investigate their optical emission properties. The sampl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92c613f5166d9c4d2607828e82de1820
https://doi.org/10.1016/j.tsf.2013.08.043

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Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications

Autor: James Gallagher, Jose Menendez, Ruben Favaro, John Kouvetakis, Chi Xu, Liying Jiang, Toshihiro Aoki

Publikováno v: Chemistry of Materials. 26:2522-2531

This paper describes preparation of a new class of Ge1–x–ySixSny direct-gap semiconductors grown on Ge-buffered Si substrates via depositions of trigermane (Ge3H8), tetragermane (Ge4H0), tetrasilane (Si4H10), and stannane (SnD4) hydride precursor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5dc8784a99b7b63a4edf92d711194b15
https://doi.org/10.1021/cm403801b

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