Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ruben Favaro"'
Autor:
Toshihiro Aoki, Patrick M. Wallace, Ruben Favaro, John Kouvetakis, Chi Xu, Andrew Edward White, Jose Menendez, Patrick Sims
Publikováno v:
Chemistry of Materials. 27:3030-3039
Crystalline Al1–xBxPSi3 alloys (x = 0.04–0.06) are grown lattice-matched on Si(100) substrates by reactions of P(SiH3)3 and Al(BH4)3 using low pressure CVD. The materials have been characterized fo...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c997b4367836be397fe4a273f2f3124
https://doi.org/10.1021/acs.chemmater.5b00412
https://doi.org/10.1021/acs.chemmater.5b00412
Autor:
Gordon Grzybowski, Ruben Favaro, John Kouvetakis, Jose Menendez, Andrew Chizmeshya, C. L. Senaratne
Publikováno v:
Chemistry of Materials. 26:4447-4458
We report a new doping protocol of pure Ge films grown on Si and related Si/Sn materials based on S delivered from high reactivity hydride molecules S(MH3)2 (M = Si,Ge). The new doping strategy targets next generation semiconductor applications requi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23272379cc6c57050c24faa69c9fb3f0
https://doi.org/10.1021/cm501434z
https://doi.org/10.1021/cm501434z
Autor:
James Gallagher, Jose Menendez, Liying Jiang, John Kouvetakis, Chi Xu, Richard T. Beeler, Ruben Favaro
Publikováno v:
Thin Solid Films. 557:177-182
Sn-rich Ge 1 − x − y Si x Sn y alloys ( y > x ) have been deposited on Si(100) using recently developed growth processes aimed at achieving the material quality and compositions required to investigate their optical emission properties. The sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c613f5166d9c4d2607828e82de1820
https://doi.org/10.1016/j.tsf.2013.08.043
https://doi.org/10.1016/j.tsf.2013.08.043
Autor:
James Gallagher, Jose Menendez, Ruben Favaro, John Kouvetakis, Chi Xu, Liying Jiang, Toshihiro Aoki
Publikováno v:
Chemistry of Materials. 26:2522-2531
This paper describes preparation of a new class of Ge1–x–ySixSny direct-gap semiconductors grown on Ge-buffered Si substrates via depositions of trigermane (Ge3H8), tetragermane (Ge4H0), tetrasilane (Si4H10), and stannane (SnD4) hydride precursor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dc8784a99b7b63a4edf92d711194b15
https://doi.org/10.1021/cm403801b
https://doi.org/10.1021/cm403801b
Publikováno v:
Semiconductor Science & Technology; Apr2015, Vol. 30 Issue 4, p1-1, 1p