Zobrazeno 1 - 10
of 1 239
pro vyhledávání: '"Rubel O"'
Autor:
Gomez-Bastidas, A.F. a, b, Rubel, O. a, ⁎
Publikováno v:
In Computer Physics Communications November 2023 292
Autor:
Oliva, R., Laurien, M., Dybala, F., Kopaczek, J., Quin, Y., Tongay, S., Rubel, O., Kudrawiec, R.
Publikováno v:
NPJ 2D Mater. Appl. 3, 20 (2019)
We present an experimental and theoretical study of the electronic band structure of ReS2 and ReSe2 at high hydrostatic pressures. The experiments are performed by photoreflectance spectroscopy and are analyzed in terms of ab initio calculations with
Externí odkaz:
http://arxiv.org/abs/1812.02995
Autor:
Cai, Y., Wilson, M. N., Hallas, A. M., Liu, L., Frandsen, B. A., Dunsiger, S. R., Krizan, J. W., Cava, R. J., Uemura, Y. J., Rubel, O., Luke, G. M.
A new pyrochlore compound, NaCaNi$_2$F$_7$, was recently synthesized and has a single magnetic site with spin-1 Ni$^{2+}$. We present zero field (ZF) and longitudinal field (LF) muon spin rotation ($\mu$SR) measurements on this pyrochlore. Density fu
Externí odkaz:
http://arxiv.org/abs/1806.10970
Autor:
Rubel, O.
Publikováno v:
Phys. Rev. B 97, 224101 (2018)
Kinetic of a reversible structural transition between insulating (2H) and metallic (1T') phases in a monolayer MoTe2 due to an electrostatic doping is studied using first-principle calculations. The driving force for the structural transition is the
Externí odkaz:
http://arxiv.org/abs/1711.11147
Autor:
Pashartis, C., Rubel, O.
Publikováno v:
Phys. Rev. B 96, 155209 (2017)
The recent progress in formation of two-dimensional (2D) GaN by a migration-enhanced encapsulated technique opens up new possibilities for group III-V 2D semiconductors with a band gap within the visible energy spectrum. Using first-principles calcul
Externí odkaz:
http://arxiv.org/abs/1707.04625
Autor:
Pashartis, C., Rubel, O.
Publikováno v:
Phys. Rev. Applied 7, 064011 (2017)
Electronic properties of III-V semiconductor alloys are examined using first principles with the focus on the spatial localization of electronic states. We compare localization at the band edges due to various isovalent impurities in a host GaAs incl
Externí odkaz:
http://arxiv.org/abs/1612.08218
Autor:
Rubel, O.
Publikováno v:
Scientific Reports 7, Article number: 4316 (2017)
Confinement of the electron gas along one of the spatial directions opens an avenue for studying fundamentals of quantum transport along the side of numerous practical electronic applications, with high-electron-mobility transistors being a prominent
Externí odkaz:
http://arxiv.org/abs/1612.01156
Autor:
Rubel, O., Bokhanchuk, A.
The high-symmetry pseudocubic init cell is often used for modelling the electronic structure of halide perovskites. However, direct comparison of the band structure with more realistic low-symmetry phases is impeded by the zone folding. We utilize a
Externí odkaz:
http://arxiv.org/abs/1508.03612
Publikováno v:
Physical Review B 90 (2014) 115202
Supercells are often used in ab initio calculations to model compound alloys, surfaces and defects. One of the main challenges of supercell electronic structure calculations is to recover the Bloch character of electronic eigenstates perturbed by dis
Externí odkaz:
http://arxiv.org/abs/1405.4218
The electronic properties of polycrystalline lead oxide consisting of a network of single-crystalline $\alpha$-PbO platelets and the formation of the native point defects in $\alpha$-PbO crystal lattice are studied using first principles calculations
Externí odkaz:
http://arxiv.org/abs/1210.8405