Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ruairi O'Kane"'
Autor:
Peter Nicholas Heys, Paul R. Chalker, Matthew Werner, Pouvanart Taechakumput, Ruairi O'Kane, Rajesh Odedra, Anthony C. Jones, Stephen Taylor, Jeff Gaskell, Kate Black
Publikováno v:
Chemical Vapor Deposition. 13:609-617
Thin films of HfO2 are deposited by liquid injection metal-organic (MO) CVD and atomic layer deposition (ALD) using the new cyclopentadienyl precursors [(MeCp)2HfMe(OiPr)] and [(MeCp)2HfMe(mmp)] (mmp = OCMe2CH2OMe). Both precursors evaporate at moder
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0518021b63a304e60aed1e67f4ca8fd9
https://doi.org/10.1002/cvde.200706589
https://doi.org/10.1002/cvde.200706589
Autor:
Richard J. Potter, Jamie F. Bickley, Paul R. Chalker, Stephen Taylor, Ruairi O'Kane, Lesley M. Smith, Helen C. Aspinall, Yim Fun Loo, Anthony C. Jones
Publikováno v:
Chemical Vapor Deposition. 11:299-305
Thin films of HiO 2 have been deposited by liquid injection metal-organic (MO)CVD using the new alkoxide precursor [Hf(dmop) 4 ] (dmop = 2-(4,4-dimethyloxazolinyl)-propanolate). The crystal structure of [Hf(dmop) 4 ] has been determined, and shows it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b8070d6333b2f7971dfb31420475b5f
https://doi.org/10.1002/cvde.200506384
https://doi.org/10.1002/cvde.200506384
Autor:
Jeff Gaskell, Paul R. Chalker, Stephen Taylor, Rajesh Odedra, Peter Nicholas Heys, Matthew Werner, Anthony C. Jones, Kate Black, Pouvanart Taechakumput, Ruairi O'Kane
Publikováno v:
ChemInform. 39
Thin films of HfO2 are deposited by liquid injection metal-organic (MO) CVD and atomic layer deposition (ALD) using the new cyclopentadienyl precursors [(MeCp)2HfMe(OiPr)] and [(MeCp)2HfMe(mmp)] (mmp = OCMe2CH2OMe). Both precursors evaporate at moder
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0868173df047e49376dc1cd9ea8d05d2
https://doi.org/10.1002/chin.200807212
https://doi.org/10.1002/chin.200807212
Autor:
Anthony C. Jones, Jeffrey M. Gaskell, Lesley M. Smith, Yim Fun Loo, Troy D. Manning, Paul R. Chalker, Helen C. Aspinall, Richard J. Potter, Ruairi O'Kane
Publikováno v:
ChemInform. 37
A number of high-permittivity (κ) dielectric oxides are currently being investigated as alternatives to SiO 2 as the dielectric insulating layer in sub-0.1 μm CMOS technology. Metal-organic (MO)CVD and atomic layer deposition (ALD) are promising te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4df4acc728fe068cb258a041f1fa1d3
https://doi.org/10.1002/chin.200621220
https://doi.org/10.1002/chin.200621220
Autor:
Paul R. Chalker, Stephen Taylor, Helen C. Aspinall, Anthony C. Jones, Jamie F. Bickley, Richard J. Potter, Ruairi O'Kane, Lesley M. Smith, Yim Fun Loo
Publikováno v:
Journal of Materials Chemistry. 15:1896
Thin films of ZrO2 and HfO2 have been deposited by liquid injection MOCVD using the new alkoxide precursors [Zr(OBut)2(dmop)2] (1) and [Hf(OBut)2(dmop)2] (2) [dmop = 2-(4,4-dimethyloxazolinyl)-propanolate]. The crystal structures of 1 and 2 have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfd1ee57db6117259fd5ca0e56773ba4
https://doi.org/10.1039/b417389a
https://doi.org/10.1039/b417389a
Autor:
Yim Fun Loo, Ruairi O'Kane, Anthony C. Jones, Helen C. Aspinall, Richard J. Potter, Paul R. Chalker, Jamie F. Bickley, Stephen Taylor, Lesley M. Smith
Publikováno v:
Journal of Materials Chemistry; May2005, Vol. 15 Issue 19, p1896-1902, 7p