Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Ru-Chin Tu"'
Autor:
Ru-Chin Tu, 涂如欽
83
This thesis includes the electrical and optical propertiesminiband transitions of the InAsSb/GaSb type II superlatticesructures grown on GaSb substrates by MOCVD and the omhic contactsthe InAs and GaSb were studied. The quality and solid epil
This thesis includes the electrical and optical propertiesminiband transitions of the InAsSb/GaSb type II superlatticesructures grown on GaSb substrates by MOCVD and the omhic contactsthe InAs and GaSb were studied. The quality and solid epil
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/65673367593097138459
Autor:
A. F. Tsatsul'nikov, A. V. Sakharov, Ru Chin Tu, Sun Bin Yin, D. A. Bedarev, Alexander Usikov, W. V. Lundin, Jim Y. Chi
Publikováno v:
physica status solidi (a). 188:73-77
A set of InGaN/GaN/AlGaN structures with various structure design and InGaN/GaN active region growth technique was grown by MOCVD on sapphire substrates. 300 K lasing under optical pumping with threshold excitation densities of 13.5 and 40 kW/cm 2 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da654bb5100d4b598e1c2820d09a4717
https://doi.org/10.1002/1521-396x(200111)188:1<73::aid-pssa73>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<73::aid-pssa73>3.0.co
Publikováno v:
Applied Physics Letters. 84:2271-2273
Cathodoluminescence mapping reveals threading defects, frequently formed by the lattice misfit between GaN and sapphire substrate, as a dark contrast connected with changes in the energy state. Multiple quantum wells, 2.5 nm In0.25Ga0.75N and 13.9 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aac272795e15eb4055ce43910e3fc668
https://doi.org/10.1063/1.1689740
https://doi.org/10.1063/1.1689740
Autor:
Chang-Cheng Chuo, Chien-Ping Lee, Ching-En Tsai, Chun-Ju Tun, Gou-Chung Chi, Te-Chung Wang, B. C. Lee, Jim Y. Chi, Ru-Chin Tu
Publikováno v:
Japanese Journal of Applied Physics. 43:L264-L266
This study examined how the duration of SiNx treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near 3×1011 cm-2 exhibited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e378f2c4fac1bf437e979137adafbca5
https://doi.org/10.1143/jjap.43.l264
https://doi.org/10.1143/jjap.43.l264
Autor:
Gou-Chung Chi, Yu-Mei Fan, Chun-Ju Tun, Chien-Ping Lee, Ching-En Tsai, Chang-Cheng Chuo, Te-Chung Wang, Ru-Chin Tu, B. C. Lee, Shyi-Ming Pan
Publikováno v:
Applied Physics Letters. 83:3608-3610
Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb76bfc91097f698e9a3acb7cb6c3c41
https://doi.org/10.1063/1.1622441
https://doi.org/10.1063/1.1622441
Autor:
Ru-Chin Tu, Te-Chung Wang, Gou-Chung Chi, Ching-En Tsai, Chang-Cheng Chuo, Shyi-Ming Pan, Jinn-Kong Sheu, Chun-Ju Tun
Publikováno v:
IEEE Photonics Technology Letters. 15:1342-1344
The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73f0ae5414824ff3e46048d21557a59e
https://doi.org/10.1109/lpt.2003.818240
https://doi.org/10.1109/lpt.2003.818240
Autor:
Hai-Ping Liu, Te-Chung Wang, Gou-Chung Chi, Ru-Chin Tu, Chang-Cheng Chuo, Ching-En Tsai, In-Gann Chen, Jinn-Kong Sheu, Chun-Ju Tun, Shyi-Ming Pan
Publikováno v:
IEEE Photonics Technology Letters. 15:1050-1052
The 410-nm near-ultraviolet (near-UV) InGaN-GaN multiple quantum-wells light-emitting diodes (LEDs) with low-pressure-grown (200 mbar) and high-pressure-grown (400 mbar) Si-doped GaN underlying layers were grown on c-face sapphire substrates by metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ba5766105150328e2178df3fefca26
https://doi.org/10.1109/lpt.2003.815310
https://doi.org/10.1109/lpt.2003.815310
Publikováno v:
IEEE Photonics Technology Letters. 15:649-651
Presents a surface-textured indium-tin-oxide (ITO) transparent ohmic contact layer on p-GaN to increase the optical output of nitride-based light-emitting diodes (LED) without destroying the p-GaN. The surface-textured ITO layer was prepared by litho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b082c50ac4eaa42e2aa400003254442
https://doi.org/10.1109/lpt.2003.809985
https://doi.org/10.1109/lpt.2003.809985
Publikováno v:
IEEE Photonics Technology Letters. 15:646-648
This study develops a highly transparent nickel-oxide (NiO/sub x/)-indium-tin-oxide (ITO) transparent Ohmic contact with excellent current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The NiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29476be3b2c0f1d11905c61da9147657
https://doi.org/10.1109/lpt.2003.810254
https://doi.org/10.1109/lpt.2003.810254
Autor:
Wei-Hong Kuo, J. K. Sheu, Ching-En Tsai, Chun-Ju Tun, Jim Y. Chi, Te-Chung Wang, Jung-Tsung Hsu, Ru-Chin Tu, Gou-Chung Chi
Publikováno v:
IEEE Electron Device Letters. 24:206-208
InGaN/GaN multiple-quantum-well laser diode (LD) structures, including an Si-doped n/sup +/-In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice (SPS) tunneling contact layer, are grown on c-face sapphire substrates by metalorganic vapor-phase epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e7a0180cd44e8c21b9a695250afd57
https://doi.org/10.1109/led.2003.810889
https://doi.org/10.1109/led.2003.810889