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Publikováno v:
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A new 18-element small-signal model for GaN high electron mobility transistor is presented to operate at very high frequencies around 70 GHz. This model accounts for the need of a capacitor to represent the capacitive effect between the end of the dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4df5ba9cab1c0628794e7dfa919744a
https://doi.org/10.1109/spin.2014.6777052
https://doi.org/10.1109/spin.2014.6777052
